Apparatus and memory device including spiral tsv connection
US-2024413124-A1 · Dec 12, 2024 · US
Dynamic random access memory [DRAM] devices
Dynamic random access memory [DRAM] devices · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10B12/00 |
| Official title | Dynamic random access memory [DRAM] devices |
| Display label | Dynamic random access memory [DRAM] devices |
| Total patents | 2,988 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 211 |
| 2016 | 159 |
| 2017 | 158 |
| 2018 | 169 |
| 2019 | 167 |
| 2020 | 231 |
| 2021 | 306 |
| 2022 | 343 |
| 2023 | 326 |
| 2024 | 410 |
| 2025 | 404 |
| 2026 | 104 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Integrated Components Which Have Both Horizontally-Oriented Transistors and Vertically-Oriented Transistors
US-2024306399-A1 · Sep 12, 2024 · US
Semiconductor memory device
US-2024237333-A9 · Jul 11, 2024 · US
Semiconductor memory cell structure, semiconductor memory, preparation method and application thereof
US-2024147686-A1 · May 2, 2024 · US
Semiconductor Structure and Method Making the Same
US-2024098963-A1 · Mar 21, 2024 · US
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US-2024030035-A1 · Jan 25, 2024 · US
Semiconductor memory device
US-2015364607-A1 · Dec 17, 2015 · US
Semiconductor device
US-2015364606-A1 · Dec 17, 2015 · US
Array Of Conductive Vias, Methods Of Forming A Memory Array, And Methods Of Forming Conductive Vias
US-2015364414-A1 · Dec 17, 2015 · US
Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof
US-9214571-B2 · Dec 15, 2015 · US
Semiconductor memory device
US-2015357473-A1 · Dec 10, 2015 · US
Semiconductor device and method for driving semiconductor device, and electronic device
US-9208849-B2 · Dec 8, 2015 · US
Semiconductor device having plural patterns extending in the same direction
US-9209245-B2 · Dec 8, 2015 · US
Storage device
US-2015340076-A1 · Nov 26, 2015 · US
Integrated circuit protected from short circuits caused by silicide
US-2015325581-A1 · Nov 12, 2015 · US
Dram interconnect structure having ferroelectric capacitors
US-2015318285-A1 · Nov 5, 2015 · US
Plated trench capacitor structures
US-9178012-B2 · Nov 3, 2015 · US
Semiconductor device and driving method thereof
US-2015311323-A1 · Oct 29, 2015 · US
Three dimensional semiconductor integrated circuit having gate pick-up line and method of manufacturing the same
US-9166015-B1 · Oct 20, 2015 · US
Semiconductor memory having both volatile and non-volatile functionality and method of operating
US-9153333-B2 · Oct 6, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10B12/00?
- CPC H10B12/00 is the Cooperative Patent Classification code for “Dynamic random access memory [DRAM] devices.”
- How many patents are filed under CPC H10B12/00 (Dynamic random access memory [DRAM] devices)?
- Our database includes 2,988 publications tagged with this CPC code.
- Is patent activity under CPC H10B12/00 growing?
- Publication counts under this code: 410 in 2024 vs 404 in 2025 (latest complete years).