Deposition of rhenium-containing thin films

Patent metadata

Field	Value
Publication number	US-12545998-B2
Application number	US-202016874616-A
Country	US
Kind code	B2
Filing date	May 14, 2020
Priority date	May 14, 2019
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

Methods for depositing rhenium-containing thin films on a substrate are described. The substrate is exposed to a rhenium precursor and a reducing agent to form the rhenium-containing film (e.g., metallic rhenium, rhenium nitride). The exposures can be sequential or simultaneous.

First claim

What is claimed is:

1 . A method consisting of:
selectively forming a zero-valent rhenium film on a substrate surface:
exposing the substrate surface consisting of a first material and a second material to a rhenium precursor in a processing chamber, wherein the first material is a metal film or a nitride film, and the second material an oxide film;
purging the processing chamber of the rhenium precursor;
exposing the substrate surface to a reducing agent to form the zero-valent rhenium film on the substrate surface, the zero-valent rhenium film selectively forming on the first material relative to the second material; and
purging the processing chamber of the reducing agent, wherein the reducing agent comprises an alkyl amine.

2 . The method of claim 1 , wherein the rhenium precursor comprises one or more of rhenium heptafluoride (ReF 7 ), rhenium hexafluoride (ReF 6 ), rhenium pentafluoride (ReF 5 ), rhenium pentachloride (ReCl 5 ), or rhenium pentabromide (ReBr 5 ).

3 . The method of claim 1 , wherein the material silicon (Si), copper (Cu), cobalt (Co), tungsten (W), ruthenium (Ru), or molybdenum (Mo).

4 . The method of claim 1 , wherein the first material comprises the nitride film.

5 . The method of claim 4 , wherein the first material titanium nitride (TiN) and the second material comprise sis silicon oxide (SiO 2 ).

6 . The method of claim 1 , wherein exposing the substrate surface to the rhenium precursor occurs at a temperature in a range of about 300° C. to about 500° C.

7 . The method of claim 1 , wherein exposing the substrate surface to the reducing agent occurs at a temperature in a range of about 300° C. to about 500° C.

8 . The method of claim 1 , wherein purging the processing chamber comprises flowing a purge gas over the substrate surface.

9 . The method of claim 1 , wherein the substrate surface is exposed to the rhenium precursor and the reducing agent simultaneously.

10 . The method of claim 1 , wherein the substrate surface is exposed to the rhenium precursor and the reducing agent sequentially.

11 . The method of claim 1 , wherein the alkyl amine is selected from one or more of RNH 2 , R 2 NH, R 3 N, R 2 SINH 2 , (R 3 Si) 2 NH, (R 3 Si) 3 N and analogues, where each R is independently H or an alkyl group having 1-12 carbon atoms.

12 . The method of claim 11 , wherein the alkyl amine comprises one or more of tert-butyl amine ( t BuNH 2 ), isopropyl amine (iPrNH 2 ), ethylamine (CH 3 CH 2 NH 2 ), diethylamine ((CH 3 CH 2 ) 2 NH), or butyl amine (BuNH 2 ).

13 . A method consisting of:
selectively forming a zero-valent rhenium film on a substrate surface by:
exposing the substrate surface consisting of a first material and a second material to a rhenium precursor in a processing chamber, wherein the first material is titanium nitride (TiN), and the second material is silicon oxide (SiO 2 );
purging the processing chamber of the rhenium precursor;
exposing the substrate surface to a reducing agent to form the zero-valent rhenium film on the substrate surface, wherein the zero-valent rhenium film selectively forms on the first material relative to the second material; and
purging the processing chamber of the reducing agent, wherein the reducing agent comprises an alkyl amine.

Assignees

• Applied Materials Inc
• Univ Wayne State

Inventors

• Knisley Thomas
• Woods Keenan N
• Saly Mark
• Cwik Stefan
• Winter Charles H

Classifications

• C23C16/04

  Coating on selected surface areas, e.g. using masks · CPC title

• C23C16/08

  from metal halides · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• C23C16/45527 Primary

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title