Method for cleaning semiconductor substrate, method for producing processed semiconductor substrate, and stripping composition

Patent metadata

Field	Value
Publication number	US-12545863-B2
Application number	US-202117913314-A
Country	US
Kind code	B2
Filing date	Mar 22, 2021
Priority date	Mar 23, 2020
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4).

First claim

The invention claimed is:

1 . A semiconductor substrate cleaning method comprising removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein
the adhesive layer is a film formed from an adhesive composition comprising an adhesive component(S) containing a siloxane adhesive which comprises a polyorganosiloxane component (A) being curable through hydrosilylation; the polyorganosiloxane component (A) comprises a polysiloxane (A1) having one or more units selected from the group consisting of a siloxane unit represented by SiO 2 (unit Q), a siloxane unit represented by R 1 R 2 R 3 SiO 1/2 (unit M), a siloxane unit represented by R 4 R 5 SiO 2/2 (unit D), and a siloxane unit represented by R 6 SiO 3/2 (unit T), and a platinum group metal catalyst (A2); wherein the polysiloxane (A1) comprises a polyorganosiloxane (a1) having one or more units selected from the group consisting of a siloxane unit represented by SiO 2 (unit Q′), a siloxane unit represented by R 1′ R 2′ R 3′ SiO 1/2 (unit M′), a siloxane unit represented by R 4′ R 5′ SiO 2/2 (unit D′), and a siloxane unit represented by R 6′ SiO 3/2 (unit T′), and at least one unit selected from the group consisting of unit M′, unit D′, and unit T′, and a polyorganosiloxane (a2) having one or more units selected from the group consisting of a siloxane unit represented by SiO 2 (unit Q″), a siloxane unit represented by R 1″ R 2″ R 3″ SiO 1/2 (unit M″), a siloxane unit represented by R 4″ R 5″ SiO 2/2 (unit D″), and a siloxane unit represented by R 6″ SiO 3/2 (unit T″) and at least one unit selected from the group consisting of unit M″, unit D″, and unit T″; each of R 1 to R 6 is a group or an atom bonded to a silicon atom and represents an alkyl group, an alkenyl group, or a hydrogen atom, each of R 1′ to R 6′ is a group bonded to a silicon atom and represents an alkyl group or an alkenyl group, and at least one of R 1′ to R 6′ is an alkenyl group, each of R 1″ to R 6″ is a group or an atom bonded to a silicon atom and represents an alkyl group or a hydrogen atom, and at least one of R 1″ to R 6″ is a hydrogen atom; the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4):

(wherein each of L 101 to L 112 independently represents a hydrogen atom, a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and at least one of L 101 to L 112 represents a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group; each of L 201 to L 210 independently represents a hydrogen atom, a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and at least one of L 201 to L 210 represents a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group; each of L 301 to L 308 independently represents a hydrogen atom, a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and at least one of L 301 to L 308 represents a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group; and each of L 401 to L 408 independently represents a hydrogen atom, a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and at least one of L 401 to L 408 represents a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group) in an amount of 80 mass % or more.

2 . The semiconductor substrate cleaning method according to claim 1 , wherein the solvent includes an organic solvent represented by any of formulae (L0) to (L4) in an amount of 85 mass % or more.

3 . The semiconductor substrate cleaning method according to claim 2 , wherein the solvent is formed of an organic solvent represented by any of formulae (L0) to (L4).

4 . The semiconductor substrate cleaning method according to claim 1 , wherein
the C1 to C5 alkyl group is a methyl group, an ethyl group, an n-propyl group, or an isopropyl group; the C2 to C5 alkenyl group is an ethenyl group, a 1-methylethenyl group, or a 2-methylethenyl group; and the C2 to C5 alkynyl group is an ethynyl group or a 2-methylethynyl group.

5 . The semiconductor substrate cleaning method according to claim 4 , wherein
one or two of the groups L 101 to L 112 are a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and each of the remaining groups is a hydrogen atom; one or two of the groups L 201 to L 210 are a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and each of the remaining groups is a hydrogen atom; one or two of the groups L 301 to L 308 are a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and each of the remaining groups is a hydrogen atom; and one or two of the groups L 401 to L 408 are a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and each of the remaining groups is a hydrogen atom.

6 . The semiconductor substrate cleaning method according to claim 1 , wherein the adhesive component(S) containing at least one species selected from among an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive.

Assignees

• Nissan Chemical Corp

Inventors

• Okuno Takahisa
• Yanai Masaki
• Fukuda Takuya
• Ogata Hiroto
• Moriya Shunsuke
• Ogino Hiroshi
• Shinjo Tetsuya

Classifications

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title

• H10P70/40

  Cleaning for reclaiming · CPC title

• B32B43/006

  Delaminating · CPC title

• C11D2111/22

  Electronic devices, e.g. PCBs or semiconductors · CPC title

• C11D7/5013

  containing nitrogen · CPC title