Cleaning agent composition and cleaning method
US-2024218293-A1 · Jul 4, 2024 · US
Semiconductor substrate cleaning method, processed semiconductor substrate manufacturing method, and composition for peeling
US12534693B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12534693-B2 |
| Application number | US-202117913624-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 22, 2021 |
| Priority date | Mar 23, 2020 |
| Publication date | Jan 27, 2026 |
| Grant date | Jan 27, 2026 |
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- Title
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Abstract
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The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L 1 and L 2 represents a C2 to C4 alkyl group, and L 3 represents O or S) in an amount of 80 mass % or more. L 1 - L 3 - L 2 (L)
First claim
Opening claim text (preview).
The invention claimed is: 1 . A semiconductor substrate cleaning method comprising removing an adhesive layer provided on a semiconductor substrate having connection portions made of a conductive material by contacting the adhesive layer with a remover composition, wherein the adhesive layer is a film formed from an adhesive composition comprising an adhesive component(S) containing a siloxane adhesive, and the adhesive component(S) comprises a siloxane adhesive containing a polyorganosiloxane component (A) that is curable through hydrosilylation; the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) in an amount of 80 mass % or more: L 1 - L 3 - L 2 (L) where L 1 and L 2 each represents a C2 to C5 alkyl group, and L 3 represents O or S. 2 . The semiconductor substrate cleaning method according to claim 1 , wherein the solvent includes the organic solvent represented by formula (L) in an amount of 85 mass % or more. 3 . The semiconductor substrate cleaning method according to claim 2 , wherein the solvent is formed of the organic solvent represented by formula (L). 4 . The semiconductor substrate cleaning method according to claim 1 , wherein L 1 and L 2 are the same group. 5 . The semiconductor substrate cleaning method according to claim 4 , wherein the C2 to C5 alkyl group is an ethyl group, an n-propyl group, or an n-butyl group. 6 . The semiconductor substrate cleaning method according to claim 1 , wherein the adhesive component(S) further comprises at least one selected from an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive.
Assignees
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Classifications
Using specified organic delamination solvent · CPC title
Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.] · CPC title
Electronic devices, e.g. PCBs or semiconductors · CPC title
Presence of polysiloxane · CPC title
Delaminating · CPC title
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- What does patent US12534693B2 cover?
- The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L 1 and L 2 represents a C2 to C4 alkyl group, and L…
- Who is the assignee on this patent?
- Nissan Chemical Corp
- What technology area does this patent fall under?
- Primary CPC classification C11D7/5009. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 27 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).