Bonding wire for semiconductor device
US-2017200689-A1 · Jul 13, 2017 · US
Al bonding wire
US12532767B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12532767-B2 |
| Application number | US-202017911090-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2020 |
| Priority date | Mar 13, 2020 |
| Publication date | Jan 20, 2026 |
| Grant date | Jan 20, 2026 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire contains 0.01 to 1% of Sc, and further contains 0.01 to 0.1% in total of at least one or more of Y, La, Ce, Pr and Nd. With regard to the Al bonding wire, a recrystallization temperature thereof is increased, so that the proceeding of recrystallization of the bonding wire can be suppressed, and strength of the wire can be prevented from being decreased even when the semiconductor device is continuously used under a high temperature environment. Accordingly, the Al bonding wire can sufficiently secure the reliability of the bonded parts after a high-temperature long-term hysteresis.
First claim
Opening claim text (preview).
The invention claimed is: 1 . An Al bonding wire consisting of Sc, at least one of Y, La, Ce, Pr, and Nd, and a balance, wherein the Al bonding wire comprises 0.01 to 1% by mass of Sc and further 0.01 to 0.1% by mass in total of at least one or more of Y, La, Ce, Pr and Nd, with the balance comprising 99.99% by mass or more of Al. 2 . The Al bonding wire according to claim 1 , wherein an average crystal grain size in a cross-section perpendicular to a wire longitudinal direction is 0.1 to 50 μm. 3 . The Al bonding wire according to claim 1 , wherein in a cross-section perpendicular to a wire longitudinal direction, an area ratio of a crystal having a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction is 30 to 90%. 4 . The Al bonding wire according to claim 1 , wherein the Vickers hardness of the wire falls within a range from Hv20 to 40. 5 . The Al bonding wire according to claim 1 , wherein a wire diameter is 50 to 600 μm.
Assignees
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Classifications
comprising aluminium [Al] · CPC title
Structures or relative sizes of bond wires · CPC title
Rods or wires (B23K35/0244 takes precedence) · CPC title
Alloys based on aluminium · CPC title
Al as the principal constituent · CPC title
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- What does patent US12532767B2 cover?
- There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire contains 0.01 to 1% of Sc, and further contains 0.01 to 0.1% in total of at least one or more of Y, La, Ce, Pr and Nd. With regard to the Al bonding wire,…
- Who is the assignee on this patent?
- Nippon Micrometal Corp, Nippon Steel Chemical & Mat Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10W72/50. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 20 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).