Resonant fin transistor (RFT)
US-11201151-B2 · Dec 14, 2021 · US
US12520575B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12520575-B2 |
| Application number | US-202217586471-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 27, 2022 |
| Priority date | Jul 29, 2021 |
| Publication date | Jan 6, 2026 |
| Grant date | Jan 6, 2026 |
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A resonator device includes a substrate with a first number of fins extending over the substrate. The fins extend along the substrate in a first direction. A second number of conductive fingers are provided over the fins, which extend in a second direction perpendicular to the first direction. The first number is less than or equal to the second number. The conductive fingers are configured to receive an input signal such that the conductive fingers resonate at an output frequency. The conductive fingers define a finger pitch therebetween, and the output frequency is based on the finger pitch.
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What is claimed is: 1 . A device, comprising: a substrate; a first number of fins over the substrate, the fins extending along the substrate in a first direction, wherein the fins do not have source/drain epitaxial thereon; a second number of conductive fingers over the fins, the conductive fingers extending in a second direction perpendicular to the first direction, the first number being less than or equal to the second number, the conductive fingers configured to receive an input signal such that the conductive fingers resonate at an output frequency; and wherein the conductive fingers are spaced apart from one another based on a predetermined finger pitch. 2 . The device of claim 1 , further comprising: a dummy conductive finger extending in the second direction that is not configured to receive the input signal; and a sense transistor having a gate connected to the dummy conductive finger. 3 . The device of claim 2 , wherein the sense transistor comprises: a sense fin extending along the substrate in the first direction, the fin including a source node and a drain node and a channel between the source and drain nodes; a conductive gate strip over the sense fin extending in the second direction. 4 . The device of claim 3 , wherein the dummy conductive finger forms the conductive gate strip on the sense fin. 5 . The device of claim 1 , wherein the fins have a fin height and the fingers have a finger height that is greater than the fin height. 6 . The device of claim 1 , further comprising a plurality of dielectric structures situated in respective gaps formed between the fins. 7 . The device of claim 1 , wherein the conductive fingers each include a conductive gate strip and a plurality of metal layers over and electrically connected to the conductive gate strip. 8 . A device, comprising: a drive region including: a plurality of fins extending parallel to one another in a first direction, wherein the fins are spaced apart from one another in a second direction perpendicular to the first direction; a plurality of dielectric structures situated in gaps formed between adjacent ones of the fins; a plurality of conductive drive fingers over the fins, the conductive drive fingers extending in the second direction and connected to receive a periodic input signal; a dummy finger that is not connected to receive the periodic input signal; and a sense region including: a sense transistor having a source, a drain and a gate, the gate connected to the dummy finger. 9 . The device of claim 8 , wherein the conductive drive fingers each include a conductive gate strip and a plurality of metal layers over and electrically connected to the conductive gate strip. 10 . The device of claim 8 , wherein the conductive drive fingers are spaced apart based on a predetermined finger pitch therebetween. 11 . The device of claim 8 , wherein there are more of the conductive drive fingers than the fins. 12 . The device of claim 8 , further comprising: first and second sense transistors including the sense transistor, the first and second sense transistors including a fin extending in the first direction and having respective first and second source/drain nodes of the first and second sense transistors; and first and second dummy fingers including the dummy finger, the first and second dummy fingers forming respective first and second gate terminals of the first and second sense transistors. 13 . The device of claim 12 , wherein the first and second dummy fingers are adjacent one another. 14 . The device of claim 8 , wherein the fins do not have source/drain epitaxial thereon. 15 . The device of claim 8 , wherein the periodic drive signal is an RF drive signal, and wherein the gate of the sense transistor is configured to provide an output signal from the dummy finger based on the RF drive signal. 16 . The device of claim 8 , wherein the drive region includes a first group of the plurality of fins spaced apart from one another based on a first predetermined finger pitch, and a second group of the plurality of fins spaced apart from one another based on a second predetermined finger pitch different from the first predetermined finger pitch. 17 . A method, comprising: forming a plurality of semiconductor fins extending in first direction over a substrate; forming a plurality of conductive drive fingers extending in a second direction over the fins; forming a dummy finger extending in the second direction over the fins; connecting a voltage input terminal configured to receive a drive signal to the plurality of conductive drive fingers; and connecting the dummy finger to an output terminal configured to output a sense current. 18 . The method of claim 17 , wherein connecting the voltage input terminal includes connecting a first voltage input terminal to a first one of the conductive drive fingers, the first voltage input terminal being configured to receive a first polarity input signal, and connecting a second voltage input terminal to a second one of the conductive drive fingers, the first voltage input terminal being configured to receive a second polarity input signal. 19 . The method of claim 17 , wherein forming the plurality of conductive drive fingers includes spacing apart the plurality of conductive drive fingers in the second direction based on a predetermined finger pitch. 20 . The method of claim 19 , the predetermined finger pitch is based on a desired output frequency of the sense current.
having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates · CPC title
using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability · CPC title
using field-effect transistor · CPC title
forming part of a transistor structure · CPC title
Comb-like, i.e. the beam comprising a plurality of fingers or protrusions along its length · CPC title
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