Resonant fin transistor (RFT)

Patent metadata

Field	Value
Publication number	US-11201151-B2
Application number	US-202016833094-A
Country	US
Kind code	B2
Filing date	Mar 27, 2020
Priority date	Mar 27, 2020
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

Embodiments disclosed herein include resonators, such as resonant fin transistors (RFTs). In an embodiment a resonator comprises a substrate, a set of contact fins over the substrate, a first contact proximate to a first end of the set of contact fins, and a second contact proximate to a second end of the set of contact fins. In an embodiment, the resonator further comprises a set of skip fins over the substrate and adjacent to the set of contact fins. In an embodiment, the resonator further comprises a gate electrode over the set of contact fins and the set of skip fins, wherein the gate electrode is between the first contact and the second contact.

First claim

What is claimed is:

1. A resonator, comprising:
a substrate;
a set of contact fins over the substrate;
a first contact proximate to a first end of the set of contact fins;
a second contact proximate to a second end of the set of contact fins;
a set of skip fins over the substrate and adjacent to the set of contact fins, wherein a portion of the set of skip fins is laterally adjacent to the first contact or the second contact; and
a gate electrode over the set of contact fins and the set of skip fins, wherein the gate electrode is between the first contact and the second contact.

2. The resonator of claim 1 , wherein individual ones of the skip fins have a first height under the gate electrode and a second height outside the gate electrode, wherein the second height is smaller than the first height.

3. The resonator of claim 2 , wherein individual ones of the contact fins comprise an epitaxially grown tip over tops of the contact fins.

4. The resonator of claim 1 , wherein the set of contact fins and the set of skip fins comprise a first pitch that is different than a second pitch of a set of device fins on the substrate.

5. The resonator of claim 1 , further comprising:
an electrically insulating layer over portions of the skip fins outside of the gate electrode.

6. The resonator of claim 1 , wherein footprints of the first contact and the second contact are within outer edges of the set of contact fins.

7. The resonator of claim 1 , wherein the set of contact fins and the set of skip fins have recessed top surfaces, and wherein epitaxial tips are grown over only individual ones of the contact fins.

8. The resonator of claim 1 , further comprising:
a second gate electrode over the set of contact fins and the set of skip fins, wherein the second gate electrode is between the first contact and the second contact.

9. The resonator of claim 8 , wherein a first height of individual ones of the skip fins under the gate electrode, under the second gate electrode, and between the gate electrode and the second gate electrode is larger than a second height of individual ones of the skip fins outside the gate electrode and the second gate electrode.

10. The resonator of claim 1 , wherein a number of contact fins in the set of contact fins is an odd number, and wherein a number of skip fins in the set of skip fins is an even number.

11. The resonator of claim 10 , wherein the number of contact fins is three, and wherein the number of skip fins is four.

12. A resonator, comprising:
a substrate;
a set of contact fins over the substrate;
a first contact proximate to a first end of the set of contact fins;
a second contact proximate to a second end of the set of contact fins;
a set of skip fins over the substrate and adjacent to the set of contact fins; and
a gate electrode over the set of contact fins and the set of skip fins, wherein the gate electrode is between the first contact and the second contact; and
a plurality of fin stumps, wherein individual fin stumps are between individual ones of the contact fins and individual ones of the skip fins.

13. The resonator of claim 12 , wherein the contact fins and the skip fins have a first pitch, and wherein a set of device fins have a second pitch that is different than the first pitch.

14. The resonator of claim 13 , wherein the first pitch is an integer multiple of the second pitch.

15. A resonator, comprising:
a substrate;
a plurality of cells arranged end to end over the substrate, wherein each cell comprises:
a set of contact fins over the substrate;
a first contact proximate to a first end of the set of contact fins;
a second contact proximate to a second end of the set of contact fins; and
a set of skip fins over the substrate and adjacent to the set of contact fins, wherein a portion of the set of skip fins is laterally adjacent to the first contact or the second contact; and

a gate electrode over the set of contact fins and the set of skip fins in each cell, wherein the gate electrode is between the first contact and the second contact.

16. The resonator of claim 15 , further comprising:
a set of dummy fins between the cells.

17. The resonator of claim 15 , wherein a total length of the resonator is approximately 1 μm or greater.

18. The resonator of claim 15 , further comprising:
epitaxially grown tips over individual ones of the contact fins.

19. A semiconductor device, comprising:
a first nanowire transistor with a first nanowire and a second nanowire over the first nanowire;
a second nanowire transistor with a third nanowire and a fourth nanowire over the third nanowire;
a first contact, wherein the first contact is electrically coupled to the first nanowire, the second nanowire, the third nanowire, and the fourth nanowire;
a gate electrode, wherein the gate electrode is electrically coupled to the first nanowire, the second nanowire, the third nanowire, and the fourth nanowire;
a second contact, wherein the second contact is electrically coupled to the first nanowire and the fourth nanowire;
a third contact, wherein the third contact is electrically coupled to the second nanowire and the third nanowire; and
a set of drive nanowire transistors, wherein a source and a drain of individual ones of the drive nanowire transistors are shorted together.

20. The semiconductor device of claim 19 , wherein the second contact is an opposite phase from the third contact.

21. The semiconductor device of claim 19 , wherein the set of drive nanowire transistors comprises first drive nanowire transistors and second drive nanowire transistors, wherein the source and drain of individual ones of the first drive nanowire transistors is an opposite phase from the source and drain of individual ones of the second drive nanowire transistors.

22. An electronic device, comprising:
a board;
a package substrate attached to the board; and
a die electrically coupled to the package substrate, wherein the die comprises a resonator, wherein the resonator comprises:
a plurality of cells arranged end to end over a substrate, wherein each cell comprises:
a set of contact fins over the substrate;
a first contact proximate to a first end of the set of contact fins;
a second contact proximate to a second end of the set of contact fins; and
a set of skip fins over the substrate and adjacent to the set of contact fins, wherein a portion of the set of skip fins is laterally adjacent to the first contact or the second contact; and

a gate electrode over the set of contact fins and the set of skip fins in each cell, wherein the gate electrode is between the first contact and the second contact.

23. The electronic device of claim 22 , further comprising:
a second resonator, wherein a resonant frequency of the second resonator is different than a resonant frequency of the resonator.

24. The electronic device of claim 22 , wherein a total length of the resonator is approximately 1 μm or greater.

Assignees

• Intel Corp

Inventors

• Hudeczek Richard
• Riess Philipp
• Geiger Richard
• Baumgartner Peter

Classifications

• H10D64/512

  Disposition of the gate electrodes, e.g. buried gates · CPC title

• H10D62/121

  oriented parallel to substrates · CPC title

• H10D30/62

  Fin field-effect transistors [FinFET] · CPC title

• H10D84/834 Primary

  comprising FinFETs · CPC title

• H03H9/02433

  Means for compensation or elimination of undesired effects · CPC title