Method to form narrow slot contacts

Patent metadata

Field	Value
Publication number	US-12488989-B2
Application number	US-202318312650-A
Country	US
Kind code	B2
Filing date	May 5, 2023
Priority date	Jun 11, 2020
Publication date	Dec 2, 2025
Grant date	Dec 2, 2025

Abstract

In method of patterning a substrate, a first relief pattern is formed based on a first layer deposited over a substrate. Openings in the first relief pattern are filled with a reversal material. The first relief pattern is then removed from the substrate and the reversal material remains on the substrate to define a second relief pattern. A fill material is deposited over the substrate that is in contact with the second relief pattern, and sensitive to a photo-acid generated from a photo-acid generator in the second relief pattern. Selected portions of the second relief pattern are exposed to a first actinic radiation to generate the photo-acid in the selected portions of the second relief pattern. The photo-acid are driven from the selected portions of the second relief pattern into portions of the fill material so that the portions of the fill material to become soluble to a predetermined developer.

First claim

What is claimed is:

1 . A method of patterning a substrate, the method comprising:
forming a first relief pattern including openings based on a first layer deposited over a substrate; filling the openings in the first relief pattern with a reversal material, containing a resin and a photo-acid generator, the resin being insoluble to a predetermined developer without any post-deposit treatment, and the resin being further insensitive to a photo-acid generated from the photo-acid generator in that the resin remains insoluble to the predetermined developer when the resin is in contact with the photo-acid without any post-deposit treatment; forming, on the substrate, a second relief pattern being an inverse pattern of the first relief pattern; depositing a fill material over the substrate and sensitive to the photo-acid generated from the photo-acid generator in that portions of the fill material that are in contact with the photo-acid become soluble to the predetermined developer; generating the photo-acid in selected portions of the second relief pattern via selective exposure to a light source, the photo-acid causing the portions of the fill material to become soluble to the predetermined developer.

2 . The method of claim 1 , further comprising removing the portions of the fill material by using the predetermined developer so as to form a third relief pattern uncovering an underlying layer that is positioned between the substrate and the fill material.

3 . The method of claim 2 , further comprising:
transferring the third relief pattern into the underlying layer through an etching process.

4 . The method of claim 1 , wherein the portions of the fill material to become soluble to the predetermined developer are caused by diffusing the photo-acid a predetermined distance into the fill material by a diffusion process through the interfaces between the selected portions of the second relief pattern and the fill material.

5 . The method of claim 1 , wherein the forming the first relief pattern includes exposing the first layer to a second actinic radiation that forms a latent pattern, and developing the latent pattern through a developer to form the first relief pattern.

6 . The method of claim 1 , wherein the first layer is a layer of photoresist.

7 . The method of claim 1 , wherein the filling the openings in the first relief pattern includes depositing an overburden of the reversal material and removing the overburden of the reversal material.

8 . The method of claim 1 , wherein the fill material is free of the photo-acid generator.

9 . The method of claim 1 , wherein the portions of the fill material to become soluble to the predetermined developer are caused by applying a thermally activated diffusion process to drive the photo-acid.

10 . The method of claim 9 , wherein the thermally activated diffusion process includes heating the substrate at a predetermined temperature and for a predetermined duration.

11 . The method of claim 1 , wherein the fill material includes a de-protection group that causes the fill material to become soluble in a presence of the photo-acid.

12 . A method of patterning a substrate, the method comprising:
forming a first relief pattern that including openings based on a first layer deposited over a substrate; filling the openings in the first relief pattern with a resin being insensitive to a solubility-changing agent in that the resin remains insoluble to a predetermined developer when the resin is in contact with the solubility-changing agent without any post-deposit solubility-neutralizing treatment; forming a second relief pattern being an inverse pattern of the first relief pattern; depositing a fill material on the second relief pattern, and sensitive to the solubility-changing agent generated from a generator compound in that portions of the fill material that are in contact with the solubility-changing agent become soluble to the predetermined developer; exposing selected portions of the second relief pattern to generate the solubility-changing agent in the selected portion of the second relief pattern; and driving the solubility-changing agent generated in the selected portions of the second relief pattern to diffuse from the selected portions of the second relief pattern into portions of the fill material through interfaces between the selected portions of the second relief pattern and the fill material, the solubility-changing agent causing the portions of the fill material to become soluble to the predetermined developer.

13 . The method of claim 12 , wherein the solubility-changing agent includes a photo-acid.

14 . The method of claim 12 , wherein the solubility-changing agent includes a photo destructive base.

15 . The method of claim 13 , wherein the generator compound is a photo acid generator (PAG) that generates the photo-acid in response to exposure to an actinic radiation.

16 . The method of claim 14 , wherein the generator compound is a photo destructive base generator that generates the photo destructive base in response to exposure to an actinic radiation.

17 . The method of claim 12 , wherein the driving the solubility-changing agent generated in the selected portions of the second relief pattern to diffuse from the selected portions of the second relief pattern into the portions of the fill material includes applying a thermally activated diffusion process by controlling an average diffusion length of the solubility-changing agent.

18 . The method of claim 12 , wherein the generator compound includes a thermal acid generator (TAG).

19 . The method of claim 18 , wherein the thermal acid generator comprises sulfonate esters that are derived from oximes, imides and benzyl alcohols.

20 . The method of claim 12 , wherein the fill material is free of the generator compound.

Assignees

• Tokyo Electron Ltd

Inventors

• Murphy Michael
• Grzeskowiak Jodi
• Devilliers Anton J

Classifications

• H10P76/4088 Primary

  Processes for improving the resolution of the masks · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/695 Primary

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title