Preheat processes for millisecond anneal system

Patent metadata

Field	Value
Publication number	US-12476151-B2
Application number	US-202418667611-A
Country	US
Kind code	B2
Filing date	May 17, 2024
Priority date	Dec 30, 2015
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.

First claim

What is claimed is:

1 . A millisecond anneal system, comprising:
a processing chamber; a wafer support plate in the processing chamber, the wafer support plate dividing the processing chamber into a top chamber and a bottom chamber; and a temperature measurement system, comprising:
a first far infrared temperature sensor configured to obtain one or more temperature measurements of a substrate in the millisecond anneal system at process temperatures of less than about 450° C., wherein the first far infrared temperature sensor comprises a pyrometer associated with a spectral range of about 8 μm to about 14 μm, the pyrometer being configured to obtain temperature measurements of the substrate at temperatures below 450° C.;
a second far infrared temperature sensor configured to obtain one or more temperature measurements of the substrate in the millisecond anneal system at process temperatures of less than about 450° C., wherein the second far infrared temperature sensor comprises a pyrometer associated with a spectral range of about 8 μm to about 14 μm;
a diagnostic flash and a reference temperature sensor, wherein measurements from the reference temperature sensor can be used for emissivity compensation of the first far infrared temperature sensor and/or the second far infrared temperature sensor; and
a processing circuit configured to process measurements from the first far infrared temperature sensor, the second far infrared temperature sensor and/or the reference temperature sensor to determine a temperature of the substrate at temperatures of less than about 450° C.

2 . The millisecond anneal system of claim 1 , wherein the first far infrared temperature sensor is unobstructed by a water window of the millisecond anneal system.

3 . The millisecond anneal system of claim 1 , wherein a water window is disposed between the first far infrared temperature sensor and the wafer plane plate.

4 . The millisecond anneal system of claim 1 , wherein a water window is disposed between the second far infrared temperature sensor and the wafer plane plate.

5 . The millisecond anneal system of claim 1 , wherein the diagnostic flash and the reference temperature sensor are configured to measure a diagnostic temperature measurement based on the diagnostic flash.

6 . The millisecond anneal system of claim 5 , wherein the processing circuit is configured to utilize the diagnostic temperature measurement for emissivity compensation for the first far infrared temperature sensor and/or the second far infrared temperature sensor.

7 . The millisecond anneal system of claim 1 , comprising one or more temperature sensors configured to obtain temperature measurements of the wafer plane plate.

8 . The millisecond anneal system of claim 1 , wherein the processing circuit is configured to utilize the temperature measurements of the wafer plane plate to determine the temperature of the substrate.

9 . The millisecond anneal system of claim 1 , comprising edge reflectors disposed on the wafer plane plate.

10 . The millisecond anneal system of claim 1 , wherein the processing circuit is configured to modify a reflectance of the edge reflectors based on the temperature of the substrate.

11 . The millisecond anneal system of claim 1 , wherein the wafer support plate comprises a quartz material.

12 . The millisecond anneal system of claim 1 , comprising one or more continuous mode lamps located proximate to a bottom of the processing chamber.

13 . The millisecond anneal system of claim 12 , wherein the one or more continuous mode lamps are controlled based at least in part on the one or more temperature measurements of the wafer support plate.

14 . The millisecond anneal system of claim 1 , wherein the temperature sensor is located in the bottom chamber and has a field of view of the wafer support plate without obstruction by a water window of the millisecond anneal system.

Assignees

• Beijing E Town Semiconductor Tech Co Ltd
• Mattson Tech Inc

Inventors

• Lieberer Markus
• Pfahler Christian
• Hagedorn Markus
• vanAbbema Michael
• Cosceev Alexandr

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title