Chemical mechanical polishing method and method for fabricating semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-12476114-B2
Application number	US-202318190300-A
Country	US
Kind code	B2
Filing date	Mar 27, 2023
Priority date	May 2, 2022
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

A chemical mechanical polishing method may include polishing a polishing object at a first temperature using a chemical mechanical polishing slurry; and removing the chemical mechanical polishing slurry on the polishing object at a second temperature different from the first temperature. The chemical mechanical polishing slurry may include abrasive particles, a thermoresponsive inhibitor, and deionized water. The thermoresponsive inhibitor may include a thermoresponsive polymer exhibiting a phase-transition between the first temperature and the second temperature. The thermoresponsive polymer may be adsorbed to the hydrophobic layer at the first temperature and desorbed from the hydrophobic layer at the second temperature.

First claim

What is claimed is:

1 . A chemical mechanical polishing method of a polishing object including a hydrophobic layer, the chemical mechanical polishing method comprising:
polishing the polishing object at a first temperature using a chemical mechanical polishing slurry; and removing the chemical mechanical polishing slurry on the polishing object at a second temperature, the second temperature being different from the first temperature, wherein the chemical mechanical polishing slurry includes abrasive particles, a thermoresponsive inhibitor, and deionized water, the thermoresponsive inhibitor includes a thermoresponsive polymer exhibiting a phase-transition between the first temperature and the second temperature, the thermoresponsive polymer is adsorbed to the hydrophobic layer at the first temperature and desorbed from the hydrophobic layer at the second temperature, and the thermoresponsive polymer includes at least one of poly(2-carboxyisopropylacrylamide), poly(N-(L)-(1-hydroxymethyl) propylmethacrylamide, poly(N-acryloyl-N′-alkylpiperazine), or xyloglucan.

2 . The chemical mechanical polishing method of claim 1 , wherein the hydrophobic layer includes at least one of polysilicon, SiOCH, SiOCN, and SiBN.

3 . The chemical mechanical polishing method of claim 1 , wherein
the thermoresponsive polymer has a lower critical solution temperature in aqueous solution, the first temperature is higher than the lower critical solution temperature, and the second temperature is lower than the lower critical solution temperature.

4 . The chemical mechanical polishing method of claim 1 , wherein
the thermoresponsive polymer has an upper critical solution temperature in aqueous solution, the first temperature is lower than the upper critical solution temperature, and the second temperature is higher than the upper critical solution temperature.

5 . The chemical mechanical polishing method of claim 1 , wherein
polishing the polishing object includes polishing the hydrophobic layer.

6 . The chemical mechanical polishing method of claim 1 , wherein
polishing the polishing object includes using the hydrophobic layer as an etch stop layer.

7 . The chemical mechanical polishing method of claim 1 , wherein the thermoresponsive polymer includes poly(2-carboxyisopropylacrylamide).

8 . The chemical mechanical polishing method of claim 1 ,
wherein on a basis of 100% by weight of the chemical mechanical polishing slurry, a content of the abrasive particles is 0.1% by weight to 10% by weight, and a content of the thermoresponsive inhibitor is 0.001% by weight to 5% by weight.

9 . The chemical mechanical polishing method of claim 1 , wherein
a pH of the chemical mechanical polishing slurry is 1 to 7.

10 . The chemical mechanical polishing method of claim 1 ,
wherein the thermoresponsive polymer includes poly(N-(L)-(1-hydroxymethyl) propylmethacrylamide.

11 . The chemical mechanical polishing method of claim 1 ,
wherein the thermoresponsive polymer includes poly(N-acryloyl-N′-alkylpiperazine).

12 . The chemical mechanical polishing method of claim 1 ,
wherein the thermoresponsive polymer includes xyloglucan.

13 . A chemical mechanical polishing method of a polishing object including a hydrophobic layer, the chemical mechanical polishing method comprising:
polishing the polishing object using the hydrophobic layer as an etch stop layer and using a chemical mechanical polishing slurry,
the chemical mechanical polishing slurry including abrasive particles, a thermoresponsive inhibitor, and deionized water,
the thermoresponsive inhibitor includes a thermoresponsive polymer,
the thermoresponsive polymer having a lower critical solution temperature,
the thermoresponsive polymer includes at least one of poly(2-carboxyisopropylacrylamide), poly(N-(L)-(1-hydroxymethyl) propylmethacrylamide, poly(N-acryloyl-N′-alkylpiperazine), or xyloglucan, and
the polishing the polishing object being performed at a first temperature, the first temperature being higher than the lower critical solution temperature; and
removing the chemical mechanical polishing slurry on the polishing object at a second temperature, the second temperature being lower than the lower critical solution temperature.

14 . The chemical mechanical polishing method of claim 13 , wherein the removing the chemical mechanical polishing slurry is performed using a Standard Clean 1 cleaning solution and hydrofluoric acid.

15 . The chemical mechanical polishing method of claim 13 , wherein the lower critical solution temperature is 30° C. to 50° C.

16 . The chemical mechanical polishing method of claim 13 , wherein the abrasive particles include silica.

17 . The chemical mechanical polishing method of claim 16 , wherein the abrasive particles include colloidal silica.

18 . A method for fabricating a semiconductor device, the method for fabricating the semiconductor device comprising:
forming a polishing object on a semiconductor substrate, the polishing object including a hydrophobic layer; polishing the polishing object at a first temperature using a chemical mechanical polishing slurry; and removing the chemical mechanical polishing slurry on the polishing object at a second temperature, the second temperature being different than the first temperature, wherein the chemical mechanical polishing slurry includes abrasive particles, a thermoresponsive inhibitor, and deionized water, the thermoresponsive inhibitor includes a thermoresponsive polymer exhibiting a phase-transition between the first temperature and the second temperature, the thermoresponsive polymer includes at least one of poly(2-carboxyisopropylacrylamide), poly(N-(L)-(1-hydroxymethyl) propylmethacrylamide, poly(N-acryloyl-N′-alkylpiperazine), or xyloglucan, and the thermoresponsive polymer is adsorbed to the hydrophobic layer at the first temperature and desorbed from the hydrophobic layer at the second temperature.

19 . The method for fabricating the semiconductor device of claim 18 ,
wherein polishing the polishing object includes polishing the hydrophobic layer.

20 . The method for fabricating the semiconductor device of claim 18 , wherein
the polishing object further includes a target layer on the hydrophobic layer, and the polishing the polishing object includes polishing the target layer using the hydrophobic layer as an etch stop layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Byun Yearin
• Kim In Kwon
• Kim Sang Kyun
• Lee Hyo San

Classifications

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P70/237

  the processing being a planarisation of insulating layers · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H10P95/064 Primary

  the removal being chemical etching · CPC title