Polishing liquid, polishing liquid set, and polishing method

Patent metadata

Field	Value
Publication number	US-2021017422-A1
Application number	US-201816981560-A
Country	US
Kind code	A1
Filing date	Sep 25, 2018
Priority date	Mar 22, 2018
Publication date	Jan 21, 2021
Grant date	—

Abstract

A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, and a liquid medium, in which a zeta potential of the abrasive grains is positive, and the hydroxy acid has one carboxyl group and one to three hydroxyl groups.

First claim

1 . A polishing liquid comprising: abrasive grains; a hydroxy acid; a polyol; and a liquid medium, wherein
a zeta potential of the abrasive grains is positive, and the hydroxy acid has one carboxyl group and one to three hydroxyl groups.

2 . The polishing liquid according to claim 1 , wherein the hydroxy acid contains a compound having one carboxyl group and one hydroxyl group.

3 . The polishing liquid according to claim 1 , wherein the hydroxy acid contains a compound having one carboxyl group and two hydroxyl groups.

4 . The polishing liquid according to claim 1 , wherein the polyol contains polyether polyol.

5 . The polishing liquid according to claim 1 , wherein a content of the hydroxy acid is 0.01 to 1.0% by mass.

6 . The polishing liquid according to claim 1 , wherein a content of the polyol is 0.05 to 5.0% by mass.

7 . The polishing liquid according to claim 1 , wherein the polishing liquid is used for polishing a surface to be polished containing silicon oxide.

8 . A polishing liquid set comprising:
constituent components of the polishing liquid according to claim 1 , separately stored as a first liquid and a second liquid, wherein the first liquid contains the abrasive grains and a liquid medium, and the second liquid contains the hydroxy acid, the polyol, and a liquid medium.

9 . A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to claim 1 .

10 . A polishing method comprising a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 8 .

11 . A polishing method for a base substrate having an insulating material and silicon nitride, the method comprising:
a step of selectively polishing the insulating material with respect to the silicon nitride by using the polishing liquid according to claim 1 .

12 . A polishing method for a base substrate having an insulating material and silicon nitride, the method comprising:
a step of selectively polishing the insulating material with respect to the silicon nitride by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 8 .

13 . A polishing method for a base substrate having an insulating material and polysilicon, the method comprising:
a step of selectively polishing the insulating material with respect to the polysilicon by using the polishing liquid according to claim 1 .

14 . A polishing method for a base substrate having an insulating material and polysilicon, the method comprising:
a step of selectively polishing the insulating material with respect to the polysilicon by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 8 .

15 . The polishing liquid according to claim 1 , wherein an average particle diameter of the abrasive grains is 200 nm or more.

16 . The polishing liquid according to claim 1 , wherein a content of the abrasive grains is 0.2% by mass or less.

17 . The polishing liquid according to claim 1 , wherein a content of the hydroxy acid is more than 40 parts by mass with respect to 100 parts by mass of the abrasive grains.

18 . The polishing liquid according to claim 1 , wherein a molecular weight of the polyol is 500 or less.

19 . The polishing liquid according to claim 1 , wherein the polyol contains at least one selected from the group consisting of polyglycerin, polyalkylene glycol, polyoxyalkylene glycol, polyoxyalkylene sorbitol ether, polyoxyalkylene glyceryl ether, polyoxyalkylene trimethylolpropane ether, and polyoxyalkylene pentaerythritol ether.

20 . The polishing liquid according to claim 1 , wherein a content of the polyol is 0.05% by mass or more.

Assignees

• Hitachi Chemical Co Ltd

Inventors

• Iwano Tomohiro

Classifications

• H10P95/064

  the removal being chemical etching · CPC title

• H10P95/062 Primary

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title