Polishing slurry composition

Patent metadata

Field	Value
Publication number	US-2022127495-A1
Application number	US-202117511582-A
Country	US
Kind code	A1
Filing date	Oct 27, 2021
Priority date	Oct 28, 2020
Publication date	Apr 28, 2022
Grant date	—

Abstract

A polishing slurry composition is provided. The polishing slurry composition includes abrasive particles, an oxidizer, an iron-containing catalyst, and a stabilizer, and a retention rate of the oxidizer according to Equation 1 is 70% or greater.
Retention rate (%) of oxidizer=(concentration (%) of oxidizer after 7 days at room temperature×100)/(initial concentration (%) of oxidizer in polishing slurry composition)  [Equation 1]

First claim

What is claimed is:

1 . A polishing slurry composition comprising:
abrasive particles; an oxidizer; an iron-containing catalyst; and a stabilizer, wherein a retention rate of the oxidizer according to Equation 1 is 70% or greater:
Retention rate (%) of oxidizer=(concentration (%) of oxidizer after 7 days at room temperature×100)/(initial concentration (%) of oxidizer in polishing slurry composition).  [Equation 1]

2 . The polishing slurry composition of claim 1 , wherein a molar ratio of the stabilizer to the iron-containing catalyst is from 5:1 to 200:1.

3 . The polishing slurry composition of claim 1 , wherein the polishing slurry composition satisfies Equation 2:
99.8−2186×(amount (% by weight (wt %)) of iron-containing catalyst in polishing slurry composition)+158×(amount (wt %) of stabilizer in polishing slurry composition)>70.  [Equation 2]

4 . The polishing slurry composition of claim 1 , wherein the iron-containing catalyst is included in an amount of 0.0001 wt % to 1 wt % in the polishing slurry composition.

5 . The polishing slurry composition of claim 1 , wherein
the iron-containing catalyst comprises an iron(II) compound, an iron(I) compound or both, and the iron-containing catalyst comprises at least one selected from a group consisting of iron nitrate, iron sulfate, iron halide, iron perchlorate, iron acetate, iron acetylacetonate, iron gluconate, iron oxalate, iron phthalate and iron succinate.

6 . The polishing slurry composition of claim 1 , wherein
the stabilizer comprises an organic acid, and the organic acid comprises at least one selected from a group consisting of citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, tartaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, fumaric acid, acetic acid, butyric acid, capric acid, caproic acid, caprylic acid, glutaric acid, glycolic acid, formic acid, lauric acid, myristic acid, palmitic acid, phthalic acid, propionic acid, pyruvic acid, stearic acid, valeric acid and ascorbic acid.

7 . The polishing slurry composition of claim 1 , wherein the stabilizer is included in an amount of 0.0001 wt % to 1 wt % in the polishing slurry composition.

8 . The polishing slurry composition of claim 1 , wherein
the abrasive particles comprise at least one selected from a group consisting of a metal oxide, a metal oxide coated with an organic material or an inorganic material and a metal oxide in a colloidal phase, and the metal oxide comprises at least one selected from a group consisting of silica, ceria, zirconia, alumina, titania, barium titanate, germania, mangania and magnesia.

9 . The polishing slurry composition of claim 1 , wherein the abrasive particles comprise single-sized particles with a size of 10 nanometers (nm) to 200 nm, or a mixture of two or more particles with different sizes of 10 nm to 200 nm.

10 . The polishing slurry composition of claim 1 , wherein the abrasive particles are included in an amount of 0.0001 wt % to 10 wt % in the polishing slurry composition.

11 . The polishing slurry composition of claim 1 , wherein the oxidizer comprises at least one selected from a group consisting of hydrogen peroxide, urea hydrogen peroxide, urea, percarbonate, periodic acid, periodate, perchloric acid, perchlorate, perbromic acid, perbromate, perboric acid, perborate, potassium permanganate, sodium perborate, permanganic acid, permanganate, persulfate, bromate, chlorite, chlorate, chromate, dichromate, chromium compound, iodate, iodic acid, ammonium peroxysulfate, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide, dioxygenyl, ozone, ozonide, nitrate, hypochlorite, hypohalite, chromium trioxide, pyridinium chlorochromate, nitrous oxide, monopersulfate, dipersulfate and sodium peroxide.

12 . The polishing slurry composition of claim 11 , wherein the oxidizer is included in an amount of 0.0001 wt % to 5 wt % in the polishing slurry composition.

13 . The polishing slurry composition of claim 1 , wherein
a polishing target film of the polishing slurry composition is a metal film, and the metal film comprises at least one selected from a group consisting of a metal, a metal nitride, a metal oxide and a metal alloy.

14 . The polishing slurry composition of claim 13 , wherein each of the metal, the metal nitride, the metal oxide and the metal alloy comprises at least one selected from a group consisting of indium (In), tin (Sn), silicon (Si), titanium (Ti), vanadium (V), gadolinium (Gd), gallium (Ga), manganese (Mn), iron (Fe), cobalt (Co), copper (Cu), zinc (Zn), zirconium (Zr), hafnium (Hf), aluminum (Al), niobium (Nb), nickel (Ni), chromium (Cr), molybdenum (Mo), tantalum (Ta), ruthenium (Ru) and tungsten (W).

15 . The polishing slurry composition of claim 1 , further comprising a polishing inhibitor,
wherein the polishing inhibitor is included in an amount of 0.0001 wt % to 1 wt % in the polishing slurry composition.

16 . The polishing slurry composition of claim 1 , wherein the polishing inhibitor comprises at least one selected from a group consisting of glycine, histidine, alanine, serine, phenylalanine, threonine, valine, leucine, isoleucine, proline, lysine, arginine, aspartic acid, tryptophan, betaine, cocamidopropyl betaine, lauryl propyl betaine, methionine, cysteine, glutamine and tyrosine.

17 . The polishing slurry composition of claim 1 , wherein pH of the polishing slurry composition is in a range from 1 to 12.

18 . The polishing slurry composition of claim 1 , wherein a polishing speed of the polishing slurry composition for a polishing target film is 500 Å/min or greater.

19 . The polishing slurry composition of claim 1 , wherein a decomposition rate of the oxidizer according to Equation 3 is 10% or less:
Decomposition rate of oxidizer=(initial concentration (%) of oxidizer in polishing slurry composition−concentration (%) of oxidizer after 7 days at room temperature)×100/(initial concentration (%) of oxidizer in polishing slurry composition).  [Equation 3]

Assignees

• Kctech Co Ltd

Inventors

• Hwang Jin Sook
• Kong Hyun Goo
• Lee Eun Jin

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title

• C09K3/1463 Primary

  Aqueous liquid suspensions · CPC title