Semiconductor processing device

Patent metadata

Field	Value
Publication number	US-12467137-B2
Application number	US-202418586902-A
Country	US
Kind code	B2
Filing date	Feb 26, 2024
Priority date	Sep 20, 2019
Publication date	Nov 11, 2025
Grant date	Nov 11, 2025

Abstract

A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

First claim

What is claimed is:

1 . A semiconductor processing device comprising:
a reactor; a vessel configured to supply a vaporized reactant to the reactor; a process control chamber in fluid communication with the vessel and the reactor between the vessel and the reactor, wherein the process control chamber is configured to collect vaporized reactant before being delivered to the reactor; a process control valve upstream of the process control chamber between the vessel and the process control chamber; a pressure transducer configured to measure the pressure in the process control chamber; and a control system configured to receive a signal from the pressure transducer indicating a measured pressure in the process control chamber.

2 . The device of claim 1 , wherein the control system is further configured to control operation of the process control valve based on the measured pressure in the process control chamber.

3 . The device of claim 2 , wherein control of the operation of the process control valve is based solely on feedback of measured pressure in the process control chamber.

4 . The device of claim 1 , further comprising a reactor supply valve downstream of the process control chamber between the reactor and the process control chamber.

5 . The device of claim 2 , wherein the control system comprises a proportional-integral-derivative (PID) controller.

6 . The device of claim 1 , further comprising a first thermal zone at a first temperature and a second thermal zone at a second temperature higher than the first temperature, wherein the vessel is disposed in the first thermal zone, and wherein the process control valve and the process control chamber are disposed in the second thermal zone.

7 . The device of claim 4 , wherein the control system is further configured to control operation of the process control valve and the reactant supply valve, wherein control of the operation of the process control valve is based at least in part on a pulse time of the reactor supply valve.

8 . The device of claim 4 , wherein the control system is further configured to control operation of the process control valve and the reactant supply valve, wherein control of the reactant supply valve is based at least in part on a setpoint pressure in the process control chamber.

9 . The device of claim 1 , further comprising a filter disposed between the vessel and the process control chamber.

10 . A semiconductor processing device comprising:
a vessel disposed in a first thermal zone at a first temperature, wherein the vessel is configured to supply a reactant; a process control chamber downstream of and in fluid communication with the vessel, the process control chamber disposed in a second thermal zone at a second temperature that is higher than the first temperature and configured to collect and transfer the reactant to a reactor downstream of the process control chamber; and a process control valve upstream of the process control chamber and disposed in the second thermal zone between the vessel and the process control chamber.

11 . The device of claim 10 , wherein the second temperature is higher than the first temperature by an amount in a range of 5° C. to 45° C.

12 . The device of claim 10 , wherein the first temperature is higher than a temperature to sublimate the vaporized reactant.

13 . The device of claim 12 , wherein the first temperature is lower than a temperature to thermally decompose the vaporized reactant.

14 . The device of claim 10 , further comprising a filter in the second thermal zone.

15 . The device of claim 10 , further comprising a supply line between the vessel and the process control chamber, wherein the supply line is maintained at or above the first temperature.

16 . A method of delivering a reactant vapor to a reaction chamber, the method comprising:
providing a reactant vapor in a vessel; transferring the reactant vapor from the vessel to a process control chamber; collecting the reactant vapor in the process control chamber; measuring the pressure of the reactant vapor in the process control chamber; and transferring the reactant vapor from the process control chamber to a reaction chamber.

17 . The method of claim 16 , further comprising controlling operation of a process control valve upstream of the process control chamber.

18 . The method of claim 17 , wherein controlling operation of a process control valve upstream comprises using a proportional-integral-derivative (PID) controller.

19 . The method of claim 17 , wherein controlling operation of a process control valve upstream is based at least in part on feedback of measured pressure in the process control chamber.

20 . The method of claim 17 , wherein controlling the operation of the process control valve comprises controlling a duration in which the process control valve is opened.

Assignees

• Asm Ip Holding Bv

Inventors

• Winkler Jereld Lee
• Shero Eric James
• White Carl Louis
• Swaminathan Shankar
• Zope Bhushan

Classifications

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• G05B11/42

  for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D. · CPC title

• C23C16/52 Primary

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/4481

  by evaporation using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title