Support unit and apparatus for treating substrate

Patent metadata

Field	Value
Publication number	US-12456606-B2
Application number	US-202117545130-A
Country	US
Kind code	B2
Filing date	Dec 8, 2021
Priority date	Dec 18, 2020
Publication date	Oct 28, 2025
Grant date	Oct 28, 2025

Abstract

Provided is a support unit included in an apparatus for treating a substrate using plasma and configured to support the substrate. The support unit may include a power supply rod connected to a high-frequency power supply; an electrode plate configured to receive power from the power supply rod; and a ground ring provided to surround the electrode plate when viewed from the top and including a ground ring to be grounded.

First claim

What is claimed is:

1. A support unit included in an apparatus for treating a substrate using plasma and configured to support the substrate, the support unit comprising:
a power supply rod connected to a high-frequency power supply;
an electrode plate configured to receive power from the power supply rod;
a ground ring provided to surround the electrode plate when viewed from the top and including a ground ring to be grounded;
an insulating member disposed between the ground ring and the electrode plate when viewed from the top;
an elevating member configured to move the ground ring in a vertical direction, wherein the elevating member comprises a first rotation shaft configured to transmit rotational motion to a second rotation shaft, and wherein the first rotation shaft is perpendicular to the second rotation shaft; and
a ground plate, wherein the ground plate is grounded and is configured to support at least a portion of the insulating member.

2. The support unit of claim 1 ,
wherein at an upper end of the ground ring, a ring member provided with a material different from the ground ring is provided.

3. The support unit of claim 2 ,
wherein the ring member is provided with a material containing quartz.

4. The support unit of claim 2 ,
wherein the upper surface of the ring member is inclined upward in a direction toward the center of the substrate.

5. The support unit of claim 4 ,
wherein on the upper portion of the insulating member, a first ring; and a second ring provided to cover the first ring are disposed when viewed from the top.

6. The support unit of claim 5 ,
wherein the second ring is provided with the same material as the ring member.

7. The support unit of claim 6 ,
wherein the second ring and the ring member are provided with a material containing quartz.

8. The support unit of claim 1 ,
wherein the ground ring is provided with a material containing a metal.

9. The support unit of claim 1 , wherein the first rotation shaft is disposed in a first groove defined in the insulating member and a second groove defined in the ground plate.

10. The support unit of claim 9 , further comprising a sealing member disposed between the insulating member and the ground plate.

11. The support unit of claim 1 , further comprising a lower cover disposed below the ground plate, wherein the lower cover and the ground plate define a lower space configured to hold one or more interface lines for connecting to at least one of an electrode or a power supply.

12. A substrate treating apparatus of treating a substrate, comprising:
a chamber configured to have a treating space;
a support unit configured to support the substrate in the treating space; and
a gas supply unit configured to supply process gas excited in a plasma state to the treating space,
wherein the support unit includes
a power supply rod connected to a high-frequency power supply;
an electrode plate configured to receive power from the power supply rod;
a ground ring provided to surround the electrode plate when viewed from the top and including a ground ring to be grounded;
an elevating member configured to move the ground ring in a vertical direction, wherein the elevating member comprises a first rotation shaft configured to transmit rotational motion to a second rotation shaft, and wherein the first rotation shaft is perpendicular to the second rotation shaft; and
a cover configured to prevent at least a portion of the elevating member from being exposed to the treating space.

13. The substrate treating apparatus of claim 12 , further comprising:
a baffle disposed between the support unit and an inner wall of the chamber and formed with at least one or more through holes and moving holes to which the ground ring is inserted.

14. The substrate treating apparatus of claim 13 ,
wherein an insulating body is disposed between the ground ring inserted to the moving hole and the baffle.

15. The substrate treating apparatus of claim 12 , further comprising:
a controller,
wherein the controller controls the elevating member so as to lift the ground ring to increase the treatment efficiency of the edge region of the substrate supported by the support unit.

16. The substrate treating apparatus of claim 12 , further comprising:
a controller,
wherein the controller controls the elevating member so as to lower the ground ring to increase the treatment efficiency of the central region of the substrate supported by the support unit.

17. A substrate treating apparatus of treating a substrate comprising:
a chamber having a treating space;
a support unit configured to support the substrate in the treating space; and
a gas supply unit configured to supply process gas excited in a plasma state to the treating space; and
a baffle disposed between the support unit and an inner wall of the chamber,
wherein the support unit includes
an electrode plate connected with a high-frequency power supply;
a ground ring that is provided to surround the electrode plate, electrically connected with the baffle, and inserted to a moving hole formed in the baffle to be movable in a vertical direction;
an elevating member configured to change an area in which the ground ring is exposed to the treating space by moving the ground ring in a vertical direction, wherein the elevating member comprises a first rotation shaft configured to transmit rotational motion to a second rotation shaft, and wherein the first rotation shaft is perpendicular to the second rotation shaft;
a cover configured to prevent at least a portion of the elevating member from being exposed to the treating space; and
an insulating member disposed between the ground ring and the electrode plate.

18. The substrate treating apparatus of claim 17 ,
wherein an insulating body is disposed between the ground ring inserted to the moving hole and the baffle.

19. The substrate treating apparatus of claim 17 , further comprising:
a controller,
wherein the controller controls the elevating member so as to lift the ground ring to increase the treatment efficiency of the edge region of the substrate supported by the support unit, and
to lower the ground ring to increase the treatment efficiency of the central region of the substrate supported by the support unit.

Assignees

• Semes Co Ltd

Inventors

• Son Hyoungkyu
• An Jong-Hwan
• Cho Jae Hyun
• Bae Min Keun
• Galstyan Ogsen
• Kim Dong Suk
• Kim Hyeon Gyu
• Lee Won Seok
• Kim Sung Je

Classifications

• H01J37/32715 Primary

  Workpiece holder · CPC title

• H01J37/32532

  Electrodes · CPC title

• H01J37/32633 Primary

  Baffles · CPC title

• H01J2237/3341

  Reactive etching · CPC title

• H01J37/3244

  Gas supply means · CPC title