Semiconductor device and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-12453187-B2
Application number	US-201917285782-A
Country	US
Kind code	B2
Filing date	Oct 18, 2019
Priority date	Oct 26, 2018
Publication date	Oct 21, 2025
Grant date	Oct 21, 2025

Abstract

A semiconductor device with high reliability is provided by the following steps: forming an oxide semiconductor; forming a first insulator in contact with the oxide semiconductor; forming a second insulator over the first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator, the second insulator, and the first insulator; cleaning the inside of the opening; embedding a conductor in the cleaned opening; forming the first insulator to include an excess-oxygen region; forming the second insulator to have a higher barrier property against oxygen, hydrogen, or water than the first insulator; and processing the opening to have a cylindrical shape or an inverted cone shape.

First claim

The invention claimed is:

1. A manufacturing method of a semiconductor device comprising:
forming an oxide semiconductor of a transistor;
forming a first insulator over the oxide semiconductor;
forming a second insulator over and in contact with the first insulator;
forming a third insulator over the second insulator;
forming a fourth insulator over the third insulator;
forming an opening in the fourth insulator, the third insulator, the second insulator, and the first insulator;
cleaning the inside of the opening;
forming a fifth insulator only on a side surface of the cleaned opening after the cleaning; and
embedding a conductor in the cleaned opening,
wherein the first insulator is formed to comprise an excess-oxygen region,
wherein the second insulator and the fifth insulator comprise aluminum oxide, respectively,
wherein a side surface of the second insulator and the fifth insulator are in contact with each other,
wherein the third insulator is in contact with side surfaces of the second insulator, the fourth insulator, and the fifth insulator, and
wherein the opening is processed to have a cylindrical shape or an inverted cone shape.

2. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the oxide semiconductor is an In—Ga—Zn oxide.

3. The manufacturing method of a semiconductor device according to claim 1 ,
wherein carbonated water is used in the cleaning.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Takahashi Erika
• Fukushima Kunihiro
• Tochibayashi Katsuaki
• Hodo Ryota

Classifications

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title