Selective conductive barrier layer formation

Patent metadata

Field	Value
Publication number	US-9343357-B2
Application number	US-201414274099-A
Country	US
Kind code	B2
Filing date	May 9, 2014
Priority date	Feb 28, 2014
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

A semiconductor device includes a die having a via coupling a first interconnect layer to a trench. The semiconductor device also includes a barrier layer on sidewalls and adjacent surfaces of the trench, and on sidewalls of the via. The semiconductor device has a doped conductive layer on a surface of the first interconnect layer. The doped conductive layer extends between the sidewalls of the via. The semiconductor device further includes a conductive material on the barrier layer in both the via and the trench. The conductive material is on the doped conductive layer disposed on the surface of the first interconnect layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a die including a via coupling a first interconnect layer to a trench;
a barrier layer on sidewalls and adjacent surfaces of the trench, and on sidewalls of the via, the barrier layer including a first sidewall portion and a second sidewall portion directly on a surface of the first interconnect layer;
a doped conductive layer directly on the surface of the first interconnect layer, the doped conductive layer extending between the first sidewall portion and the second sidewall portion of the barrier layer on opposing sidewalls of the via; and
a conductive material on the barrier layer in both the via and the trench, the conductive material disposed directly on a surface of the doped conductive layer opposite the surface of the first interconnect layer.

2. The semiconductor device of claim 1 , in which the barrier layer comprises aluminum oxide (Al 2 O 3 ).

3. The semiconductor device of claim 1 , in which the conductive material comprises copper and aluminum.

4. The semiconductor device of claim 1 , further comprising an etch stop layer on portions of the first interconnect layer, the etch stop layer comprising silicon nitrogen-containing oxycarbides (SiCON).

5. The semiconductor device of claim 1 , in which the doped conductive layer comprises a copper aluminum alloy.

6. The semiconductor device of claim 1 , in which the first interconnect layer comprises copper.

7. The semiconductor device of claim 1 , in which the doped conductive layer also extends between the conductive material and the surface of the first interconnect layer.

8. The semiconductor device of claim 1 incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.

9. A semiconductor device comprising:
a die including a via coupling a first interconnect layer to a trench;
a barrier layer on sidewalls and adjacent surfaces of the trench, and on sidewalls of the via, the barrier layer including a first sidewall portion and a second sidewall directly on a surface of the first interconnect layer;
a doped conductive layer directly on the surface of the first interconnect layer, the doped conductive layer extending between the first sidewall portion and the second sidewall portion of the barrier layer on opposing sidewalls of the via; and
means for conducting in both the via and the trench on the barrier layer, the conducting means being directly on a surface of the doped conductive layer opposite the surface of the first interconnect layer.

10. The semiconductor device of claim 9 , in which the barrier layer comprises aluminum oxide (Al 2 O 3 ).

11. The semiconductor device of claim 9 , in which the means for conducting comprises copper and aluminum.

12. The semiconductor device of claim 9 , further comprising an etch stop layer on portions of the first interconnect layer, the etch stop layer comprising silicon nitrogen-containing oxycarbides (SiCON).

13. The semiconductor device of claim 9 , in which the doped conductive layer comprises a copper aluminum alloy.

14. The semiconductor device of claim 9 , in which the first interconnect layer comprises copper.

15. The semiconductor device of claim 9 , in which the doped conductive layer also extends between the sidewalls of the via.

16. The semiconductor device of claim 9 incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.

Assignees

• Qualcomm Inc

Inventors

• Xu Jeffrey Junhao
• Zhu John Jianhong
• Yeap Choh Fei

Classifications

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/076

  in via holes or trenches · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10W20/049

  by diffusing alloying elements · CPC title