PECVD of SiBN thin films with low leakage current

Patent metadata

Field	Value
Publication number	US-12451345-B2
Application number	US-202418650014-A
Country	US
Kind code	B2
Filing date	Apr 29, 2024
Priority date	Jan 2, 2019
Publication date	Oct 21, 2025
Grant date	Oct 21, 2025

Abstract

Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more examples, a capacitor device is provided and contains a stopper layer containing silicon boron nitride and disposed on a substrate, a dielectric layer disposed on the stopper layer, vias formed within the dielectric layer and the stopper layer, metal contacts disposed on bottoms of the vias, a nitride barrier layer containing a metal nitride material and disposed on walls of the vias and disposed on the metal contacts, and an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer contains one or more holes or voids formed therein. The silicon boron nitride contains about 18 atomic percent (at %) to about 50 at % of boron.

First claim

What is claimed is:

1. A capacitor device, comprising:
a stopper layer comprising silicon boron nitride and disposed on a substrate, wherein the silicon boron nitride comprises about 18 atomic percent (at %) to about 50 at % of boron;
a dielectric layer disposed on the stopper layer;
vias formed within the dielectric layer and the stopper layer;
metal contacts disposed on bottoms of the vias, wherein each via contains one of the metal contacts;
a nitride barrier layer comprising a metal nitride material and disposed on walls of the vias and disposed on the metal contacts; and
an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer comprises one or more holes or voids formed therein.

2. The capacitor device of claim 1 , further comprising a first support layer disposed above the stopper layer, wherein a first portion of the dielectric layer is between the stopper layer and the first support layer, and wherein the first support layer comprises the silicon boron nitride.

3. The capacitor device of claim 2 , further comprising a second support layer disposed above the first support layer, wherein a second portion of the dielectric layer is between the first support layer and the second support layer, and wherein the second support layer comprises the silicon boron nitride.

4. The capacitor device of claim 1 , wherein the silicon boron nitride comprises 25 at % to about 45 at % of boron.

5. The capacitor device of claim 1 , wherein the silicon boron nitride comprises 25 at % to 50 at % of boron.

6. The capacitor device of claim 1 , wherein the silicon boron nitride has a nitrogen to silicon atomic ratio of about 1.05 to about 1.5.

7. The capacitor device of claim 1 , wherein the silicon boron nitride has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4.

8. The capacitor device of claim 1 , wherein the silicon boron nitride comprises about 5 at % to about 15 at % of hydrogen.

9. The capacitor device of claim 1 , wherein the silicon boron nitride has a leakage current of about 5×10 −11 A/cm 2 to about 9.9×10 −10 A/cm 2 at 1.5 MV/cm.

10. The capacitor device of claim 1 , wherein the silicon boron nitride has a leakage current of less than 1×10 −9 A/cm 2 at 1.5 MV/cm.

11. The capacitor device of claim 1 , wherein the silicon boron nitride comprises:
about 60 at % to about 80 at % of boron bonded to silicon; and
about 20 at % to about 40 at % of boron bonded to nitrogen.

12. The capacitor device of claim 1 , wherein the silicon boron nitride has a thickness of about 50 Å to about 800 Å.

13. The capacitor device of claim 1 , wherein the dielectric layer comprises amorphous silicon, and wherein the oxide layer comprises silicon oxide.

14. The capacitor device of claim 1 , wherein the metal nitride material comprises titanium nitride, tantalum nitride, tungsten nitride, silicides thereof, dopants thereof, or any combination thereof.

15. The capacitor device of claim 1 , wherein the metal contact comprises copper, tungsten, aluminum, chromium, cobalt, alloys thereof, or any combination thereof.

16. A capacitor device, comprising:
a stopper layer comprising silicon boron nitride and disposed on a substrate;
a dielectric layer disposed on the stopper layer;
vias formed within the dielectric layer and the stopper layer;
metal contacts disposed on bottoms of the vias, wherein each via contains one of the metal contacts;
a barrier layer disposed on walls of the vias and disposed on the metal contacts;
an oxide layer disposed within the vias on the barrier layer, wherein the oxide layer comprises one or more holes or voids formed therein;
a first support layer disposed above the stopper layer, wherein a first portion of the dielectric layer is between the stopper layer and the first support layer; and
a second support layer disposed above the first support layer, wherein a second portion of the dielectric layer is between the first support layer and the second support layer.

17. The capacitor device of claim 16 , wherein each of the first support layer and the second support layer comprises the silicon boron nitride.

18. The capacitor device of claim 17 , wherein the silicon boron nitride comprises 25 atomic percent (at %) to about 50 at % of boron.

19. A capacitor device, comprising:
a stopper layer comprising silicon boron nitride and disposed on a substrate, wherein the silicon boron nitride comprises about 18 atomic percent (at %) to about 50 at % of boron;
a dielectric layer disposed on the stopper layer;
vias formed within the dielectric layer and the stopper layer;
metal contacts disposed on bottoms of the vias, wherein each via contains one of the metal contacts;
a barrier layer disposed on walls of the vias and disposed on the metal contacts; and
an oxide layer disposed within the vias on the barrier layer, wherein the oxide layer comprises one or more holes or voids formed therein.

20. The capacitor device of claim 19 , wherein the silicon boron nitride comprises:
25 at % to about 50 at % of boron;
about 5 at % to about 15 at % of hydrogen;
about 60 at % to about 80 at % of boron bonded to silicon;
about 20 at % to about 40 at % of boron bonded to nitrogen;
a nitrogen to silicon atomic ratio of about 1.05 to about 1.5; and
a leakage current of about 5×10 −11 A/cm 2 to about 9.9×10 −10 A/cm 2 at 1.5 MV/cm.

Assignees

• Applied Materials Inc

Inventors

• Yang Chuanxi
• Yu Hang
• Kamath Sanjay
• Padhi Deenesh
• Kim Honggun
• Lee Euhngi
• Huang Zubin
• Kedlaya Diwakar N
• Cheng Rui
• Janakiraman Karthik

Classifications

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/69433 Primary

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• C23C16/0209

  by heating · CPC title

• C23C16/513

  using plasma jets · CPC title

• C23C16/345

  Silicon nitride · CPC title