Enhancing uv compatibility of low k barrier film

Patent metadata

Field	Value
Publication number	US-2016013049-A1
Application number	US-201414770641-A
Country	US
Kind code	A1
Filing date	Feb 18, 2014
Priority date	Mar 14, 2013
Publication date	Jan 14, 2016
Grant date	—

Abstract

Embodiments of the present invention generally relate to a method for forming a dielectric barrier layer. The dielectric barrier layer is deposited over a substrate by a plasma enhanced deposition process. In one embodiment, a gas mixture is introduced into a processing chamber. The gas mixture includes a silicon-containing gas, a nitrogen-containing gas, a boron-containing gas, and argon (Ar) gas.

First claim

1 . A method for forming a barrier layer on a substrate, comprising:
delivering a mixture of gases into a processing chamber, wherein the mixture of gases comprises a silicon-containing gas, a nitrogen-containing gas, and argon (Ar) gas; generating a plasma inside the processing chamber; and depositing the barrier layer on the substrate, wherein the barrier layer has a change in stress of about 200 MPa or less after a UV treatment.

2 . The method of claim 1 , wherein the silicon-containing gas is trimethylsilane (TMS).

3 . The method of claim 1 , wherein the silicon-containing gas is hexamethylcyclotrisilazane (HMCTZ).

4 . The method of claim 1 , wherein the silicon-containing gas is bis(diethylamino) silane (BDEAS).

5 . The method of claim 1 , wherein the silicon-containing gas is disilylmethane (Bono-2).

6 . The method of claim 2 , wherein the Ar gas has a flow rate ranging from about 1000 sccm to about 5000 sccm.

7 . A method for forming a barrier layer on a substrate, comprising:
delivering a mixture of gases into a processing chamber, wherein the mixture of gases comprises a silicon-containing gas, a nitrogen-containing gas, a boron-containing gas, and Ar gas; generating a plasma inside the processing chamber; and depositing the barrier layer on the substrate.

8 . The method of claim 7 , wherein the silicon-containing gas is TMS.

9 . The method of claim 8 , wherein the boron-containing gas is diborane.

10 . The method of claim 9 , wherein a concentration of the boron-containing gas ranges from about 0.1% to about 10%.

11 . The method of claim 7 , wherein the silicon-containing gas is HMCTZ

12 . The method of claim 7 , wherein the silicon-containing gas is BDEAS.

13 . The method of claim 7 , wherein the silicon-containing gas is Bono-2.

14 . A method for forming a barrier layer on a substrate, comprising:
delivering a mixture of gases into a processing chamber, wherein the mixture of gases comprises TMS, ammonia (NH 3 ), diborane and Ar; generating a plasma inside the processing chamber; and depositing a barrier layer on the substrate, wherein the barrier layer has a dielectric constant of about 5.0 and a change in stress of about 300 MPa or less after a UV treatment.

15 . The method of claim 14 , wherein a concentration of the diborane ranges from about 0.1% to about 10%.

16 . The method of claim 7 , wherein the barrier layer has a dielectric constant of about 5.0 and a change in stress at about 300 MPa or less after a UV treatment.

Assignees

• Applied Materials Inc

Inventors

• Ye Weifeng
• Shek Mei-Yee
• Balseanu Mihaela
• Zhang Xiaojun
• Ba Xiaolan
• Jin Yu
• Xia Li-Qun

Classifications

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10W20/095

  by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096) · CPC title

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title