Method of forming a vanadium nitride-containing layer

Patent metadata

Field	Value
Publication number	US-12448683-B2
Application number	US-202418404983-A
Country	US
Kind code	B2
Filing date	Jan 5, 2024
Priority date	Apr 24, 2020
Publication date	Oct 21, 2025
Grant date	Oct 21, 2025

Abstract

Methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

First claim

We claim:

1. A method of forming a sequence of layers on a substrate, the method comprising
providing the substrate within a reaction chamber of a reactor;
depositing an underlayer on a surface of the substrate;
depositing, via a first cyclical deposition process, a vanadium nitride-containing layer onto the underlayer,
wherein the first cyclical deposition process comprises:
providing a vanadium precursor to the reaction chamber; and
providing a nitrogen precursor to the reaction chamber.

2. The method of claim 1 , wherein after the first cyclical deposition process, the method further comprises depositing, via a second cyclical deposition process, a titanium nitride layer onto the vanadium nitride-containing layer.

3. The method of claim 2 , wherein the second cyclical deposition process includes:
providing a TiCl 4 precursor to the reaction chamber; and
providing an NH 3 precursor to the reaction chamber.

4. The method of claim 1 , wherein the reaction chamber is purged between providing the vanadium precursor to the reaction chamber and providing the nitrogen precursor to the reaction chamber.

5. The method of claim 1 , wherein the nitrogen precursor is selected from one or more of ammonia (NH 3 ), hydrazine (N 2 H 4 ), and other compounds comprising or consisting of nitrogen and hydrogen.

6. The method of claim 1 , wherein the nitrogen precursor does not include diatomic nitrogen.

7. The method of claim 1 , wherein:
the surface of the substrate comprises a first surface material and a second surface material, and
the first cyclical deposition process produces a selectivity of deposition of the vanadium nitride-containing layer on the first surface material relative to the second surface material.

8. The method of claim 7 , wherein the selectivity of deposition is at least 80%.

9. The method of claim 7 , wherein the selectivity of deposition is regulated through etch-back during the first cyclical deposition process.

10. The method of claim 7 , wherein the first surface material comprises metal, metallic, metal oxide or dielectric surface.

11. The method of claim 1 , wherein a thickness of the vanadium-nitride layer is 0.6 nm or less.

12. The method of claim 1 , wherein the vanadium-nitride layer is non-continuous.

13. The method of claim 1 , wherein the first cyclical deposition process includes annealing in with a silane compound that is present.

14. The method of claim 13 , wherein the silane compound is SiH 4 .

15. A method of forming a structure of a device, the method comprising:
providing a substrate within a reaction chamber of a reactor, the substrate comprising one or more dielectric or insulating material layers;
depositing, via a first cyclical deposition process, a vanadium nitride-containing layer onto a top layer of the one or more dielectric or insulating material layers,
wherein the first cyclical deposition process comprises:
providing a vanadium precursor to the reaction chamber; and
providing a nitrogen precursor to the reaction chamber.

16. The method of claim 15 , wherein the vanadium nitride-containing layer is configured to function as at least one of a work function metal, a barrier, a metal electrode, a p-metal gate, or a dipole (p) tuning layer.

17. The method of claim 15 , wherein a work function of the vanadium nitride containing layer is greater than 4.6 eV.

18. The method of claim 15 , wherein after the first cyclical deposition process, the method further comprises depositing, via a second cyclical deposition process, a titanium nitride layer onto the vanadium nitride-containing layer.

19. The method of claim 15 , wherein the vanadium nitride-containing layer is configured to function as a barrier layer.

20. The method of claim 19 , wherein the barrier layer includes a thickness of less than 5 nm.

Assignees

• Asm Ip Holding Bv

Inventors

• Homm Jara Pia
• Knaepen Werner
• Pierreux Dieter
• Jongbloed Bert
• Arnou Panagiota
• Chang Ren-Jie
• Xie Qi
• Alessio Verni Giuseppe
• Van Der Star Gido

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/432 Primary

  using selective deposition · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title