Method of forming vanadium nitride-containing layer

Patent metadata

Field	Value
Publication number	US-11898243-B2
Application number	US-202017113301-A
Country	US
Kind code	B2
Filing date	Dec 7, 2020
Priority date	Apr 24, 2020
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

First claim

The invention claimed is:

1. A method of forming a vanadium nitride-containing layer, the method comprising
providing a substrate within a reaction chamber of a reactor;
depositing, via a first cyclical deposition process, a vanadium nitride-containing layer onto a surface of the substrate to form a seed layer,
wherein the first cyclical deposition process comprises:
providing a vanadium precursor to the reaction chamber; and
providing a nitrogen precursor to the reaction chamber; and

after the first cyclical deposition process, depositing, via a second cyclical deposition process, a titanium nitride layer onto the seed layer.

2. The method according to claim 1 , wherein the reaction chamber is purged between providing the vanadium precursor to the reaction chamber and providing the nitrogen precursor to the reaction chamber.

3. The method of claim 1 , wherein the nitrogen precursor is selected from one or more of ammonia (NH 3 ), hydrazine (N 2 H 4 ), and other compounds comprising or consisting of nitrogen and hydrogen.

4. The method of claim 1 , wherein the nitrogen precursor does not include diatomic nitrogen.

5. The method of claim 1 , wherein the surface of the substrate comprises a first surface material and a second surface material, and wherein the first cyclical deposition process leads to a selectivity of deposition of the vanadium nitride-containing layer nitride containing layer selectively on the first surface material relative to the second surface material.

6. The method of claim 5 , wherein the selectivity of deposition is at least 80%.

7. The method according to claim 5 , wherein the selectivity of deposition is regulated through etch-back during the first cyclical deposition process.

8. The method of claim 5 , wherein the first surface material comprises metal, metallic, metal oxide or dielectric surface.

9. The method of claim 1 , wherein the second cyclical deposition process includes:
providing a TiCl 4 precursor to the reaction chamber; and
providing an NH 3 precursor to the reaction chamber.

10. The method of claim 1 , wherein a thickness of the seed layer is 0.6 nm or less.

11. The method of claim 1 , wherein the seed layer is non-continuous.

12. The method of claim 1 , wherein the first cyclical deposition process includes annealing in the presence of a silane compound.

13. The method according to claim 12 , wherein the silane compound is SiH 4 .

14. A method of forming a structure, the method comprising
providing a substrate within a reaction chamber of a reactor; and
using a first cyclical deposition process, depositing a vanadium nitride-containing layer onto a surface of the substrate to form a seed layer,
wherein the first cyclical deposition process comprises:
providing a vanadium precursor to the reaction chamber; and
providing a nitrogen precursor to the reaction chamber; and

after the seed layer is formed from the first cyclical deposition process, using a second cyclical deposition process to deposit a titanium nitride layer onto the seed layer.

Assignees

• Asm Ip Holding Bv

Inventors

• Homm Jara Pia
• Knaepen Werner
• Pierreux Dieter
• Jongbloed Bert
• Arnou Panagiota
• Chang Ren-Jie
• Xie Qi
• Alessio Verni Giuseppe
• Van Der Star Gido

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/432 Primary

  using selective deposition · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title