Temperature control device for semiconductor wafer and temperature control method for semiconductor wafer

Patent metadata

Field	Value
Publication number	US-12444626-B2
Application number	US-202217590857-A
Country	US
Kind code	B2
Filing date	Feb 2, 2022
Priority date	Feb 17, 2021
Publication date	Oct 14, 2025
Grant date	Oct 14, 2025

Abstract

A temperature control device for a semiconductor wafer includes a placement part having a placement surface on which a semiconductor wafer is placed and having a plurality of regions in which the placement surface is partitioned in a plan view, a temperature adjustment part configured to independently adjust a temperature of the placement part for each of the plurality of regions, a plurality of temperature detection parts provided in at least one of the plurality of regions and configured to detect a temperature of the region of which the temperature has been adjusted by the temperature adjustment part, and a control part configured to monitor detection temperatures of the plurality of temperature detection parts, to select one having a large temperature change per unit time among a plurality of monitored detection temperatures, and to control the temperature adjustment part based on the selected detection temperature.

First claim

What is claimed is:

1. A temperature control device for a semiconductor wafer, comprising:
a placement part having a placement surface on which a semiconductor wafer is placed and having a plurality of regions into which the placement surface is partitioned in a plan view;
a temperature adjustment part configured to independently adjust a temperature of the placement part for each of the plurality of regions;
a plurality of temperature detection parts provided in at least one of the plurality of regions and configured to detect a temperature of the region of which the temperature has been adjusted by the temperature adjustment part; and

a control part configured to monitor detection temperatures of the plurality of temperature detection parts, to select one having a large temperature change per unit time among the plurality of monitored detection temperatures, and to control the temperature adjustment part based on the selected detection temperature, wherein a plurality of the temperature detection parts are provided in each of the plurality of regions, and
the control part controls the temperature adjustment part in one of two regions adjacent to each other in a plan view among the plurality of regions and controls the temperature adjustment part in the other one of the two regions based on the selected detection temperature.

2. The temperature control device for a semiconductor wafer according to claim 1 , wherein the placement surface is formed in a circular shape in a plan view, and
the plurality of temperature detection parts are disposed apart from each other in a circumferential direction and a radial direction of the placement surface in a plan view.

3. The temperature control device for a semiconductor wafer according to claim 2 , wherein the plurality of regions include a central region which is provided in a center of the placement surface in a plan view and is formed in a circular shape in a plan view, and a plurality of outer regions which are partitioned from each other in the circumferential direction on a radially outer side of the central region in a plan view and are formed in an arc shape in a plan view,
and
the plurality of temperature detection parts are disposed apart from each other in the central region and each of the plurality of outer regions in a plan view.

4. The temperature control device for a semiconductor wafer according to claim 1 , wherein the placement part is formed in a plate shape having the placement surface on a first surface,
the temperature adjustment part is provided on a second surface of the placement part on a side opposite to a side on which the placement surface is provided,
the placement part has a recessed part which opens on the second surface,
the temperature adjustment part has a through hole connected to the recessed part, and
the temperature detection part is disposed in the recessed part through the through hole.

5. The temperature control device for a semiconductor wafer according to claim 1 , wherein the temperature adjustment part includes a thermoelectric element.

6. A temperature control device for a semiconductor wafer, comprising:
a placement part having a placement surface on which a semiconductor wafer is placed and having a plurality of regions into which the placement surface is partitioned in a plan view;
a temperature adjustment part configured to independently adjust a temperature of the placement part for each of the plurality of regions;
a plurality of temperature detection parts provided in at least one of the plurality of regions and configured to detect a temperature of the region of which the temperature has been adjusted by the temperature adjustment part; and
a control part configured to monitor detection temperatures of the plurality of temperature detection parts, to select one having a large temperature change per unit time among the plurality of monitored detection temperatures, and to control the temperature adjustment part based on the selected detection temperature, wherein the placement part is formed in a plate shape having the placement surface on a first surface,
the temperature adjustment part is provided on a second surface of the placement part on a side opposite to a side on which the placement surface is provided,
the placement part has a recessed part which opens on the second surface,
the temperature adjustment part has a through hole connected to the recessed part, and
the temperature detection part is disposed in the recessed part through the through hole.

Assignees

• Kelk Ltd
• Tokyo Seimitsu Co Ltd

Inventors

• Omuro Wataru
• Kobayashi Atsushi
• Motoyama Takashi
• Takahashi Takenori

Classifications

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10N10/10

  operating with only the Peltier or Seebeck effects · CPC title

• H01L22/20

  Electricity · mapped topic