RF pulsing within pulsing for semiconductor RF plasma processing

US12424410B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12424410-B2
Application numberUS-202318348320-A
CountryUS
Kind codeB2
Filing dateJul 6, 2023
Priority dateDec 7, 2017
Publication dateSep 23, 2025
Grant dateSep 23, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

First claim

Opening claim text (preview).

The invention claimed is: 1. A matchless plasma source comprising: an amplification circuit configured to receive a filtered waveform, wherein the amplification circuit is configured to provide an amplified waveform based on the filtered waveform, wherein the filtered waveform includes a first series of clock pulses followed by a state, wherein the state is followed a second series of clock pulses; a controller coupled to the amplification circuit, wherein the controller is configured to control a shape of the amplified waveform to facilitate providing a shaped waveform; and a reactive circuit coupled to the amplification circuit to remove harmonics from the shaped waveform to provide a sinusoidal radio frequency (RF) signal to an electrode. 2. The matchless plasma source of claim 1 , further comprising a filter, wherein the amplification circuit includes a first transistor and a second transistor, wherein the first transistor has a first terminal and a second terminal, wherein the second transistor has a first terminal and a second terminal, wherein the first terminal of the first transistor is coupled to the filter, the second terminal of the first transistor is coupled to the first terminal of the second transistor, and the second terminal of the second transistor is coupled to a ground potential. 3. The matchless plasma source of claim 2 , further comprising a gate driver coupled to the amplification circuit, wherein the gate driver is configured to provide a plurality of reversely synchronized signals, wherein upon receiving the plurality of reversely synchronized signals, the first transistor is configured to be turned on when the second transistor is turned off and is configured to be turned off when the second transistor is turned on, wherein one of the plurality of reversely synchronized signals is the filtered waveform. 4. The matchless plasma source of claim 3 , wherein when the first transistor is turned on, the amplified waveform is generated based on the filtered waveform and when the second transistor is turned on, the amplified waveform is generated based on the ground potential. 5. The matchless plasma source of claim 2 , wherein the amplification circuit has an output, wherein the second terminal of the first transistor is coupled to the first terminal of the second transistor at the output to provide the amplified waveform at the output. 6. The matchless plasma source of claim 1 , further comprising: a direct current (DC) rail coupled to the amplification circuit, wherein the DC rail includes a DC voltage source and a filter, wherein the DC voltage source is coupled to the filter and is configured to generate a DC voltage; and a signal generator coupled to the DC rail and configured to generate a shaping waveform, wherein the filter is configured to receive the DC voltage from the DC voltage source and the shaping waveform from the signal generator, and perform a logical AND operation between the DC voltage and the shaping waveform to provide another filtered waveform. 7. The matchless plasma source of claim 1 , wherein the state is an off state. 8. The matchless plasma source of claim 1 , further comprising: a signal generator coupled to the controller, wherein the controller is configured to provide the shape to the signal generator, wherein upon receiving the shape, the signal generator is configured to generate a shaping waveform having the shape; and a filter coupled to the signal generator, wherein the filter is configured to receive a direct current (DC) voltage and the shaping waveform to provide another filtered waveform. 9. A plasma tool comprising: a plasma chamber having an electrode; and a matchless plasma source coupled to the plasma chamber, the matchless plasma source including: an amplification circuit configured to receive a filtered waveform, wherein the amplification circuit is configured to provide an amplified waveform based on the filtered waveform, wherein the filtered waveform includes a first series of clock pulses followed by a state, wherein the state is followed a second series of clock pulses; a controller coupled to the amplification circuit, wherein the controller is configured to control a shape of the amplified waveform to facilitate providing a shaped waveform; and a reactive circuit coupled to the amplification circuit to remove harmonics from the shaped waveform to provide a sinusoidal radio frequency (RF) signal to the electrode. 10. The plasma tool of claim 9 , wherein the matchless plasma source includes a filter, wherein the amplification circuit includes a first transistor and a second transistor, wherein the first transistor has a first terminal and a second terminal, wherein the second transistor has a first terminal and a second terminal, wherein the first terminal of the first transistor is coupled to the filter, the second terminal of the first transistor is coupled to the first terminal of the second transistor, and the second terminal of the second transistor is coupled to a ground potential. 11. The plasma tool of claim 10 , wherein the matchless plasma source includes a gate driver coupled to the amplification circuit, wherein the gate driver is configured to provide a plurality of reversely synchronized signals, wherein upon receiving the plurality of reversely synchronized signals, the first transistor is configured to be turned on when the second transistor is turned off and is configured to be turned off when the second transistor is turned on, wherein one of the plurality of reversely synchronized signals is the filtered waveform. 12. The plasma tool of claim 11 , wherein when the first transistor is turned on, the amplification waveform is generated based on the filtered waveform and when the second transistor is turned on, the amplification waveform is generated based on the ground potential. 13. The plasma tool of claim 10 , wherein the amplification circuit has an output, wherein the second terminal of the first transistor is coupled to the first terminal of the second transistor at the output to provide the amplified waveform at the output. 14. The plasma tool of claim 9 , wherein the matchless plasma source comprises: a direct current (DC) rail coupled to the amplification circuit, wherein the DC rail includes a DC voltage source and a filter, wherein the DC voltage source is coupled to the filter and is configured to generate a DC voltage; and a signal generator coupled to the DC rail and configured to generate a shaping waveform, wherein the filter is configured to receive the DC voltage from the DC voltage source and the shaping waveform from the signal generator, and perform a logical AND operation between the DC voltage and the shaping waveform to provide another filtered waveform. 15. The plasma tool of claim 9 , wherein the state is an off state. 16. The plasma tool of claim 9 , wherein the matchless plasma source comprises: a signal generator coupled to the controller, wherein the controller is configured to provide the shape to the signal generator, wherein upon receiving the shape, the signal generator is configured to generate a shaping waveform having the shape; and a filter coupled to the signal generator, wherein the filter is configured to receive a direct current (DC) voltage and the shaping waveform to provide another filtered waveform. 17. A method comprising: receiving a filtered waveform, wherein the filtered waveform includes a first series of clock pulses followed by a state, wherein the state is followed a second series of clock pulses; generating an amplified

Assignees

Inventors

Classifications

  • having a waveform comprising a portion of a sinusoid (generating sinusoidal oscillations H03B) · CPC title

  • Etching · CPC title

  • Antennas, e.g. particular shapes of coils · CPC title

  • by amplifying (H03K5/04 takes precedence) · CPC title

  • H03K3/80Primary

    Generating trains of sinusoidal oscillations (by keying or interruption of sinusoidal oscillations H03C; for transmission of digital information H04L) · CPC title

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What does patent US12424410B2 cover?
A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.
Who is the assignee on this patent?
Lam Res Corp
What technology area does this patent fall under?
Primary CPC classification H03K3/80. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 23 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).