Interposer, method for fabricating the same, and semiconductor package having the same

US12417988B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12417988-B2
Application numberUS-202418643474-A
CountryUS
Kind codeB2
Filing dateApr 23, 2024
Priority dateMar 17, 2021
Publication dateSep 16, 2025
Grant dateSep 16, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bottom surface of the pad recess positioned at a second vertical level that is higher than the first vertical level, an interposer pad of which a portion fills the pad recess of the interposer protective layer and the remaining portion protrudes from the interposer protective layer, and an interposer through electrode extending through the base layer and the interposer protective layer to the interposer pad, the interposer through electrode electrically connecting the wiring structure to the interposer pad.

First claim

Opening claim text (preview).

What is claimed is: 1. An interposer manufacturing method comprising: preparing a base layer having a first surface and a second surface opposite to each other, and an interposer through electrode penetrating the base layer and protruding from the second surface of the base layer; forming an interposer protective layer covering the second surface of the base layer and having an upper surface at the same vertical level as an upper surface of the interposer through electrode; removing a portion of the interposer protective layer to form a pad recess in which an upper portion of the interposer through electrode is exposed and a portion of the interposer protective layer is exposed on a bottom surface of the pad recess; forming an interposer pad filling the pad recess of the interposer protective layer and protruding from the interposer protective layer; and forming a rear wiring protective layer having a terminal opening exposing a portion of the interposer pad and covering the remaining portion of the interposer pad and the interposer protective layer. 2. The interposer manufacturing method of claim 1 , further comprising forming an alignment recess horizontally spaced apart from the pad recess and exposing a portion of a protective layer of the interposer on the bottom surface. 3. The interposer manufacturing method of claim 2 , wherein a bottom surface of the pad recess and a bottom surface of the alignment recess are formed at the same vertical level. 4. The interposer manufacturing method of claim 2 , wherein the rear wiring protective layer fills the alignment recess. 5. The interposer manufacturing method of claim 1 , wherein a thickness of the remaining portion of the interposer pad protruding from the interposer protective layer is greater than a thickness of a portion of the interposer pad filling the pad recess of the interposer protective layer. 6. The interposer manufacturing method of claim 1 , wherein the forming of the interposer protective layer comprises: forming a lower interposer protective layer covering the second surface of the base layer; and forming an upper interposer protective layer on the lower interposer protective layer, the upper interposer protective layer including a material different from that of the lower interposer protective layer. 7. The interposer manufacturing method of claim 6 , wherein the forming of the pad recess comprises exposing a portion of the lower interposer protective layer on a bottom surface of the pad recess, wherein the whole lower surface of the interposer pad contacts the interposer through electrode and the lower interposer protective layer. 8. The interposer manufacturing method of claim 6 , wherein the forming of the pad recess comprises: exposing a portion of the upper interposer protective layer and a portion of the lower interposer protective layer on the bottom surface of the pad recess; and surrounding a side surface of the interposer through electrode with a portion of the lower interposer protective layer exposed on the bottom surface of the pad recess. 9. The interposer manufacturing method of claim 6 , wherein a maximum thickness of the lower interposer protective layer is greater than a maximum thickness of the upper interposer protective layer. 10. The interposer manufacturing method of claim 1 , wherein the interposer pad covers all of the upper portion of the interposer through electrode exposed in the pad recess. 11. The interposer manufacturing method of claim 1 , wherein the interposer protective layer is formed directly on the second surface of the base layer. 12. The interposer manufacturing method of claim 6 , wherein the forming of the pad recess comprises exposing removing a portion of the upper interposer protective layer to expose a portion of the lower interposer protective layer and removing a portion of the exposed interposer protective layer, wherein the interposer through electrodes pass through the lower interposer protective layer and a portion of the upper interposer protective layer is disposed over the interposer through electrodes. 13. The interposer manufacturing method of claim 1 , wherein the thickness of a portion of the interposer pad above the interposer through electrodes is less than a thickness of a portion of the interposer pad that is not over the interposer through electrodes.

Assignees

Inventors

Classifications

  • the encapsulations exposing the passive side of the semiconductor body · CPC title

  • characterised by arrangements for thermal management of the stacked chips · CPC title

  • characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

  • on active surfaces of flip-chip devices, e.g. underfills · CPC title

  • Dispositions of multiple bond pads · CPC title

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Frequently asked questions

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What does patent US12417988B2 cover?
An interposer according to an embodiment of the present invention includes a base layer having opposite first and second surfaces, a wiring structure on the first surface of the base layer, an interposer protective layer disposed on the second surface of the base layer and having a pad recess with a lower surface of the interposer protective layer positioned at a first vertical level and a bott…
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 16 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).