Bonding wire for semiconductor devices

Patent metadata

Field	Value
Publication number	US-12412864-B2
Application number	US-202117553275-A
Country	US
Kind code	B2
Filing date	Dec 16, 2021
Priority date	Apr 28, 2016
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

First claim

The invention claimed is:

1. Bonding wire for semiconductor devices consisting of:
(C-1) P of 0.060 at % to 0.180 at %, or (C-2) P and one or more of Be, B, Ca, Y, La, and Ce in a total of 0.060 at % to 0.180 at %;
one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %;
one or more of Ni, Cu, Rh, Pd, Pt, and Au in a total of 0.01 at % to 5.00 at %; and
a balance of Ag and unavoidable impurities.

2. The bonding wire for semiconductor devices according to claim 1 wherein when defining a ratio of a total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the second element atomic ratio at a region from a wire surface to 1 nm from the wire surface in a depth direction is 1.1 times or more the second element atomic ratio at a region from 1 nm from the wire surface to 10 nm from the wire surface in the depth direction.

3. The bonding wire for semiconductor devices according to claim 1 wherein when defining a ratio of the total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the second element atomic ratio at a region from a wire surface to 10 nm from the wire surface in a depth direction is 2 times or more the second element atomic ratio at a region from 20 nm from the wire surface to 30 nm from the wire surface in the depth direction.

4. The bonding wire for semiconductor devices according to claim 1 wherein an average crystal grain size in a cross-section perpendicular to a wire axis is 0.2 μm to 3.5 μm.

5. The bonding wire for semiconductor devices according to claim 1 , wherein when measuring a crystal direction in a wire axial direction at a cross-section parallel to a wire axis, including the wire axis, of said bonding wire, the abundance ratio of a <100> crystal direction where an angular difference with respect to the wire axial direction of said bonding wire is 15 degrees or less is, by area ratio, 30% to 100%.

6. The bonding wire for semiconductor devices according to claim 1 containing one or more of In, Ga, and Cd in a total of 2.00 at % or less.

7. Bonding wire for semiconductor devices consisting of:
(C-3) P of 0.031 at % to less than 0.060 at % or (C-4) P of 0.031 at % to less than 0.060 at % and one or more of Be, B, Ca, Y, La, and Ce in a total of 0.031 at % to 0.180 at %;
one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %;
one or more of Ni, Cu, Rh, Pd, Pt, and Au in a total of 0.01 at % to 5.00 at %; and
a balance of Ag and unavoidable impurities,
wherein when defining a ratio of the total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the bonding wire satisfies one or both of
(A) the second element atomic ratio at a region from a wire surface to 1 nm from the wire surface in a depth direction is 1.1 times or more the second element atomic ratio at a region from 1 nm from the wire surface to 10 nm from the wire surface in the depth direction, and
(B) the second element atomic ratio at a region from the wire surface to 10 nm from the wire surface in the depth direction is 2 times or more the second element atomic ratio at a region from 20 nm from the wire surface to 30 nm from the wire surface in the depth direction.

Assignees

• Nippon Micrometal Corp
• Nippon Steel Chemical & Mat Co Ltd

Inventors

• Oda Daizo
• Ohkabe Takumi
• Haibara Teruo
• Yamada Takashi
• Oyamada Tetsuya
• Uno Tomohiro

Classifications

• H10W72/07555

  changes in materials · CPC title

• H10W72/5528

  Intermetallic compounds · CPC title

• H10W72/5525

  comprising copper [Cu] · CPC title

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title