Compositions for tungsten etching inhibition

Patent metadata

Field	Value
Publication number	US-12378439-B2
Application number	US-202017632816-A
Country	US
Kind code	B2
Filing date	Aug 4, 2020
Priority date	Aug 8, 2019
Publication date	Aug 5, 2025
Grant date	Aug 5, 2025

Abstract

The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.

First claim

The invention claimed is:

1. A composition for inhibition of tungsten etching consisting of
(A) at least one inorganic abrasive particle;
(B) at least one corrosion inhibitor selected from methylbenzethonium, methylbenzethonium salts, benzethonium and benzethonium salts, wherein the at least one corrosion inhibitor (B) is present in a concentration in the range of from ≥0.0001 wt. % to ≤0.009 wt. %, based on the total weight of the composition; and
(C) an aqueous medium, wherein the aqueous medium (C) is deionized water; and
at least one corrosion inhibitor (D) having the weight average molecular weight in the range of from >=5000 g/mol to <=50,000 g/mol, determined according to gel permeation chromatography, and
at least one oxidizing agent (E) selected from the group consisting of organic peroxides, inorganic peroxides, persulfates, iodates, potassium hydroxide, ferric nitrate, periodic acids, periodates, permanganates, perchloric acids, perchlorates, phosphoric acids, bromic acids and bromates, and
wherein the pH of the composition is in the range of from ≥6.0 to ≤8.0.

2. The composition according to claim 1 , wherein the at least one inorganic abrasive particle (A) is selected from the group consisting of metal oxides, metal nitrides, metal carbides, silicides, borides, ceramics, diamond, organic hybrid particles, inorganic hybrid particles and silica.

3. The composition according to claim 1 , wherein the at least one inorganic abrasive particle (A) has an average particle diameter in the range of from ≥1 nm to ≤1000 nm, determined according to dynamic light scattering technique.

4. The composition according to claim 1 wherein the at least one corrosion inhibitor (B) is benzethonium.

5. The composition according to claim 1 , wherein the benzethonium salts are selected from the group consisting of benzethonium fluoride, benzethonium chloride, benzethonium bromide, benzethonium hydroxide and benzethonium citrate.

6. The composition according to claim 1 , wherein the at least one corrosion inhibitor (D) is selected from polyacrylamides and polyacrylamide copolymers.

7. The composition according to claim 6 , wherein the at least one corrosion inhibitor (D) is present in a concentration in the range of from ≥0.001 wt. % to ≤0.5 wt. %, based on the total weight of the composition.

8. The composition according to claim 1 , wherein the at least one oxidizing agent (E) is present in a concentration in the range of from 0.01 wt. % to <1.0 wt. %, based on the total weight of the composition.

9. The composition according to claim 1 , wherein the at least one oxidizing agent (E) is hydrogen peroxide.

10. A process for the manufacture of a semiconductor device comprising the chemical mechanical polishing of a substrate(S) used in the semiconductor industry wherein the substrate(S) comprises
(i) tungsten and/or
(ii) tungsten alloys
in the presence of a composition as defined in claim 1 .

11. The process according to claim 10 , wherein the static etch rate (SER) of tungsten is below 30 Å/min.

12. A method for inhibit etching of tungsten comprising providing a composition according to claim 1 and inhibiting etching of tungsten.

Assignees

• Basf Se

Inventors

• Lauter Michael
• Guevenc Haci Osman
• Chiu Wei Lan
• Wei Te Yu

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09K13/06

  with organic material · CPC title

• C09G1/06

  Other polishing compositions · CPC title

• C09G1/00

  Polishing compositions (French polish C09F11/00; detergents C11D) · CPC title