Composition for tungsten CMP

Patent metadata

Field	Value
Publication number	US-9303188-B2
Application number	US-201414203647-A
Country	US
Kind code	B2
Filing date	Mar 11, 2014
Priority date	Mar 11, 2014
Publication date	Apr 5, 2016
Grant date	Apr 5, 2016

Abstract

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

First claim

The invention claimed is:

1. A chemical mechanical polishing composition comprising:
a water based liquid carrier;
a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV; and
a polycationic amine compound in solution in the liquid carrier.

2. The composition of claim 1 , wherein the colloidal silica has a permanent positive charge of at least 15 mV.

3. The composition of claim 1 , wherein the colloidal silica is treated with an aminosilane compound.

4. The composition of claim 3 , wherein the aminosilane compound is selected from the group consisting of such as bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane), 3-(N-styrylmethyl-2-aminoethylaminopropyl trialkoxysilane, aminopropyl trialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane), trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, bis(trialkoxysilylpropyl)amine, bis(trialkoxysilylpropyl)amine, and mixtures thereof.

5. The composition of claim 1 , further comprising an iron containing accelerator.

6. The composition of claim 5 , wherein the iron containing accelerator comprises a soluble iron containing catalyst.

7. The composition of claim 6 , further comprising a stabilizer bound to the soluble iron containing catalyst, the stabilizer being selected from the group consisting of phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof.

8. The composition of claim 1 , further comprising a hydrogen peroxide oxidizer.

9. The composition of claim 1 , having a pH in a range from about 2.0 to about 3.5.

10. The composition of claim 1 , wherein the polycationic amine compound is a polyquaternary amine compound.

11. The composition of claim 10 , wherein the polyquaternary amine compound is a diquaternary amine compound.

12. The composition of claim 11 , wherein the diquaternary amine is selected from the group consisting of N,N′-methylenebis(dimethyltetradecylammonium bromide), 1,1,4,4-tetrabutylpiperazinediium dibromide, N,N,N′,N′,N′-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, N,N′-hexamethylenebis(tributylammonium hydroxide), didodecyl-tetramethyl-1,4-butanediaminium diiodide, 1,5-dimethyl-1,5-diazoniabicyclo(3.2.2)nonane dibromide, and N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, and mixtures thereof.

13. The composition of claim 11 , wherein the diquaternary amine comprises an alkyl group having 10 or more carbon atoms.

14. A method of chemical mechanical polishing a substrate including a tungsten layer, the method comprising:
(a) contacting the substrate with a polishing composition comprising:
(i) a water based liquid carrier;
(ii) a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV; and
(iii) a polycationic amine compound in solution in the liquid carrier;

(b) moving the polishing composition relative to the substrate; and
(c) abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

15. The method of claim 14 , wherein the colloidal silica has a permanent positive charge of at least 15 mV.

16. The method of claim 14 , wherein the colloidal silica is treated with an aminosilane compound selected from the group consisting of such as bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane), 3-(N-styrylmethyl-2-aminoethylaminopropyl trialkoxysilane, aminopropyl trialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane), trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, bis(trialkoxysilylpropyl)amine, bis(trialkoxysilylpropyl)amine, and mixtures thereof.

17. The method of claim 14 , wherein the polishing composition further comprises:
a soluble iron containing catalyst; and
a stabilizer bound to the soluble iron containing catalyst, the stabilizer being selected from the group consisting of phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof.

18. The method of claim 14 , wherein the polishing composition further comprises a hydrogen peroxide oxidizer.

19. The method of claim 14 , wherein the polycationic amine compound is a diquaternary amine compound selected from the group consisting of N,N′-methylenebis(dimethyltetradecylammonium bromide), 1,1,4,4-tetrabutylpiperazinediium dibromide, N,N,N′,N′,N′-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, N,N′-hexamethylenebis(tributylammonium hydroxide), didodecyl-tetramethyl-1,4-butanediaminium diiodide, 1,5-dimethyl-1,5-diazoniabicyclo(3.2.2)nonane dibromide, and N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, and mixtures thereof.

20. The composition of claim 14 , wherein the polycationic amine compound comprises a diquaternary amine compound having an alkyl group with 10 or more carbon atoms.

Assignees

• Cabot Microelectronics Corp

Inventors

• Grumbine Steven
• Dysard Jeffrey
• Fu Lin
• Ward William
• Whitener Glenn

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title