Semiconductor structure and the forming method thereof

Patent metadata

Field	Value
Publication number	US-12376323-B2
Application number	US-202217834936-A
Country	US
Kind code	B2
Filing date	Jun 8, 2022
Priority date	Nov 23, 2021
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

The invention provides a semiconductor structure, which comprises a GaN gallium nitride (GaN) layer, an aluminum gallium nitride (AlGaN) layer on the gallium nitride layer, a polarization boost layer on and in direct contact with the aluminum gallium nitride layer, and a gate liner layer on the polarization boost layer.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a gallium nitride (GaN) layer;
an aluminum gallium nitride (AlGaN) layer located on the gallium nitride layer;
a polarization boost layer located on the aluminum gallium nitride layer and directly contacting the aluminum gallium nitride layer;
a gate liner layer located on the polarization boost layer; and
a groove in the polarization boost layer, and the gate liner layer is partially located in the groove.

2. The semiconductor structure according to claim 1 , wherein the material of the polarization boost layer comprises p-type doped silicon.

3. The semiconductor structure according to claim 1 , wherein the minimum thickness of the polarization boost layer is less than 30 angstroms.

4. The semiconductor structure according to claim 1 , wherein a thickness of the polarization boost layer directly under the groove is less than a thickness of the polarization boost layer beside the groove.

5. The semiconductor structure of claim 1 , further comprising a polarization modification layer located in the groove and between the gate liner layer and the polarization boost layer.

6. The semiconductor structure according to claim 5 , wherein the polarization modification layer comprises silicon, and a carbon concentration in the polarization modification layer is higher than a carbon concentration in the polarization boost layer.

7. The semiconductor structure of claim 1 , wherein the gate liner layer comprises p-type doped gallium nitride.

8. The semiconductor structure of claim 1 , further comprising a dielectric layer on the polarization boost layer, and a part of the gate liner layer covers the dielectric layer.

9. The semiconductor structure according to claim 1 , wherein the polarization boost layer contains doping ions selected from boron, aluminum, gallium, indium and thallium.

Assignees

• United Microelectronics Corp

Inventors

• Chang Chih-Wei
• Lin da-jun
• Chung Yao-Hsien
• Su Shih-Wei
• Chang Hao-Hsuan
• Chien Ting-An
• Tsai Bin-Siang

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D30/015

  of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT · CPC title

• H10D62/834

  further characterised by the dopants · CPC title

• H10D62/343

  Gate regions of field-effect devices having PN junction gates · CPC title

• H10D30/4755

  having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs · CPC title