High electron mobility transistor and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-11264492-B2
Application number	US-201916533812-A
Country	US
Kind code	B2
Filing date	Aug 7, 2019
Priority date	Jul 9, 2019
Publication date	Mar 1, 2022
Grant date	Mar 1, 2022

Abstract

A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

First claim

What is claimed is:

1. A high electron mobility transistor (HEMT), comprising:
a buffer layer on a substrate;
a barrier layer on the buffer layer;
a gate electrode on the barrier layer;
a gate dielectric layer between the barrier layer and the gate electrode;
a doped region under the gate dielectric layer and overlapping the barrier layer and the buffer layer, wherein two sidewalls of the doped region are aligned with two sidewalls of the gate electrode;
a hard mask between the gate dielectric layer and the barrier layer, wherein a sidewall of the gate dielectric layer is aligned with a sidewall of the hard mask and a width of a bottom surface of the doped region is greater than a width of a bottom surface of the gate dielectric layer and equal to a width of a top surface the gate electrode; and
a source electrode and a drain electrode adjacent to two sides of the gate electrode on the buffer layer.

2. The HEMT of claim 1 , wherein the doped region comprises a U-shape.

Assignees

• United Microelectronics Corp

Inventors

• Huang Shin-Chuan
• Yeh Chih-Tung
• Chang Chun-Ming
• Chen bo-rong
• Liao Wen-Jung
• Hou Chun-Liang

Classifications

• H10P30/208

  of electrically inactive species · CPC title

• H10D64/01358

  the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material · CPC title

• H10P30/206

  into Group III-V semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10D64/256

  for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673) · CPC title