Cobalt compound, thin-film forming raw material, thin-film, and method of producing thin-film

Patent metadata

Field	Value
Publication number	US-12371778-B2
Application number	US-202218575963-A
Country	US
Kind code	B2
Filing date	Jun 28, 2022
Priority date	Jul 12, 2021
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

Provided is a cobalt compound represented by the following general formula (1):

where R 1 to R 7 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2);

where R 8 to R 10 each independently represent an alkyl group having 1 to 5 carbon atoms, A 1 and A 2 each independently represent an alkanediyl group having 1 to 5 carbon atoms, and * represents a bonding site.

First claim

The invention claimed is:

1. A cobalt compound represented by the following general formula (1):

where R 1 to R 7 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2);

where R 8 to R 10 each independently represent an alkyl group having 1 to 5 carbon atoms, A 1 and A 2 each independently represent an alkanediyl group having 1 to 5 carbon atoms, and represents a bonding site.

2. The cobalt compound according to claim 1 , wherein, in the general formula (1), R 1 , R 2 , R 4 , and R 5 each independently represent an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the general formula (L-1), or a group represented by the general formula (L-2), and R 3 , R 6 , and R 7 each independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 5 carbon atoms.

3. A thin-film forming raw material, comprising the cobalt compound of claim 1 .

4. A method of producing a thin-film, comprising forming a thin-film containing a cobalt atom on a surface of a substrate through use of the thin-film forming raw material of claim 3 .

5. The method of producing the thin-film according to claim 4 , wherein the method comprises:
introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a film formation chamber having set therein the substrate; and
subjecting the cobalt compound represented by the general formula (1) in the raw material gas to decomposition and/or a chemical reaction, to thereby form the thin-film containing a cobalt atom on the surface of the substrate.

6. The method of producing the thin-film according to claim 5 ,
wherein the method further comprises, between the raw material introduction and the thin-film formation, forming a precursor thin-film on the surface of the substrate through use of the thin-film forming raw material, and
wherein during the thin-film formation, causing the precursor thin-film to react with a reactive gas, to thereby form the thin-film containing a cobalt atom on the surface of the substrate.

7. A thin-film forming raw material, comprising the cobalt compound of claim 2 .

Assignees

• Adeka Corp

Inventors

• Yoshino Tomoharu
• Takeda Keisuke
• Yamashita Atsushi

Classifications

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/4485

  by evaporation without using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title

• C07F15/065 Primary

  without a metal-carbon linkage · CPC title

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C23C16/16

  from metal carbonyl compounds · CPC title