Compound, thin-film forming raw material that contains said compound, and method of manufacturing thin film

Patent metadata

Field	Value
Publication number	US-12104245-B2
Application number	US-202017771181-A
Country	US
Kind code	B2
Filing date	Oct 19, 2020
Priority date	Nov 1, 2019
Publication date	Oct 1, 2024
Grant date	Oct 1, 2024

Abstract

Provided is a thin-film forming raw material containing a compound represented by the following formula (1):in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

First claim

The invention claimed is:

1. A compound represented by the following formula (1):

in the formula (1), R 1 to R 5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that R 1 and R 5 each represent an alkyl group having 1 to 5 carbon atoms, at least one of R 2 and R 4 represents an alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom, and R 3 represents a hydrogen atom.

2. The compound according to claim 1 , wherein the group containing a fluorine atom is an alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom.

3. The compound according to claim 1 , wherein M in the formula (1) represents a metal atom selected from copper, nickel, cobalt, tin, manganese, and zinc.

4. A thin-film forming raw material, comprising the compound of claim 1 .

5. A method of manufacturing a thin-film, comprising:
introducing a raw material gas obtained by vaporizing the thin-film forming raw material of claim 4 into a treatment atmosphere having a substrate set therein; and
subjecting the compound in the raw material gas to decomposition and/or a chemical reaction, to thereby form a metal-containing thin-film on a surface of the substrate.

Assignees

• Adeka Corp

Inventors

• Sakurai Atsushi
• Hatase Masako
• Enzu Masaki
• Takeda Keisuke
• Fukushima Ryota
• Yamashita Atsushi

Classifications

• H10P14/42

  using a gas or vapour · CPC title

• C07D487/10

  Spiro-condensed systems · CPC title

• C07F15/045

  without a metal-carbon linkage · CPC title

• C07F3/003

  without C-Metal linkages · CPC title

• C07F15/065 Primary

  without a metal-carbon linkage · CPC title