Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film

US2022017553A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2022017553-A1
Application numberUS-201917292819-A
CountryUS
Kind codeA1
Filing dateNov 8, 2019
Priority dateNov 12, 2018
Publication dateJan 20, 2022
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

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To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): L 1 -Co-L 2   (1) wherein L 1 and L 2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): wherein R 1 and R 2 represent a C 1-6 alkyl group or a tri(C 1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein R 3 represents a tri(C 1-6 alkyl)silyl group, R 4 and R 5 represent a C 1-4 alkyl group, and X represents a C 1-6 alkylene group; wherein R 6 and R 8 represent a C 1-6 alkyl group, R 7 represents a hydrogen atom or a C 1-4 alkyl group, Y represents an oxygen atom or NR 9 , Z represents an oxygen atom or NR 10 , and R 9 and R 10 independently represent a C 1-6 alkyl group.

First claim

Opening claim text (preview).

1 . A cobalt complex represented by the following formula (1): L 1 -Co-L 2   (1) wherein L 1 and L 2 which are different from each other represent a unidentate amide ligand represented by the following formula (A), a bidentate amide ligand represented by the following formula (B) or a hetero atom-containing ligand represented by the following formula (C): wherein R 1 and R 2 independently represent a C 1-6 alkyl group or a tri(C 1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein R 3 represents a tri(C 1-6 alkyl)silyl group, R 4 and R 5 independently represent a C 1-4 alkyl group, and X represents a C 1-6 alkylene group; wherein R 6 and R 8 independently represent a C 1-6 alkyl group, R 7 represents a hydrogen atom or a C 1-4 alkyl group, Y represents an oxygen atom or NR 9 , Z represents an oxygen atom or NR 10 , and R 9 and R 10 independently represent a C 1-6 alkyl group. 2 . The cobalt complex according to claim 1 , which is represented by the following formula (1AB): wherein R 1 and R 2 are as defined for R 1 and R 2 in the above formula (A), and R 3 , R 4 , R 5 and X are as defined for R 3 , R 4 , R 5 and X in the above formula (B). 3 . The cobalt complex according to claim 2 , wherein R 1 , R 2 and R 3 are a tri(C 1-4 alkyl)silyl group, R 4 and R 5 are a methyl group or an ethyl group, and X is a C 1-4 alkylene group. 4 . The cobalt complex according to claim 2 , wherein R 1 , R 2 and R 3 are a trimethylsilyl group, R 4 and R 5 are a methyl group or an ethyl group, and X is a C 1-4 alkylene group. 5 . The cobalt complex according to claim 1 , which is represented by the following formula (1AC): wherein R 1 and R 2 are as defined for R 1 and R 2 in the above formula (A), and R 6 , R 7 , R 8 , Y and Z are as defined for R 6 , R 7 , R 8 , Y and Z in the above formula (C). 6 . The cobalt complex according to claim 5 , wherein R 1 and R 2 are a tri(C 1-4 alkyl)silyl group, R 6 and R 8 are a methyl group, R 7 is a hydrogen atom, Y is NR 9 , Z is NR 10 , and R 9 and R 10 are a C 1-4 alkyl group. 7 . The cobalt complex according to claim 5 , wherein R 1 and R 2 are a trimethylsilyl group, R 6 and R 8 are a methyl group, R 7 is a hydrogen atom, Y is NR 9 , Z is NR 10 , and R 9 and R 10 are a C 1-4 alkyl group. 8 . The cobalt complex according to claim 1 , which is represented by the following formula (1BC): wherein R 3 , R 4 , R 5 and X are as defined for R 3 , R 4 , R 5 and X in the above formula (B), and R 6 , R 7 , R 8 , Y and Z are as defined for R 6 , R 7 , R 8 , Y and Z in the above formula (C). 9 . The cobalt complex according to claim 8 , wherein R 3 is a tri(C 1-4 alkyl)silyl group, R 4 and R 5 are a methyl group or an ethyl group, X is a C 1-4 alkylene group, R 6 and R 8 are a C 1-4 alkyl group, R 7 is a hydrogen atom, and Y and Z are an oxygen atom. 10 . The cobalt complex according to claim 8 , wherein R 3 is a trimethylsilyl group, R 4 and R 5 are a methyl group or an ethyl group, X is a C 1-4 alkylene group, R 6 and R 8 are a C 1-4 alkyl group, R 7 is a hydrogen atom, and Y and Z are an oxygen atom. 11 . A method for producing a cobalt complex represented by the following formula (1AB), which comprises reacting a bisamide complex represented by the following formula (2) and an aminoalkylamine represented by the following formula (3): wherein R 1 and R 2 independently represent a C 1-6 alkyl group or a tri(C 1-6 alkyl)silyl group, D represents a neutral ligand, and n represents 0 or 1; wherein R 3 represents a tri(C 1-6 alkyl)silyl group, R 4 and R 5 independently represent a C 1-6 alkyl group, and X represents a C 1-6 alkylene group; wherein R 1 and R 2 are as defined for R 1 and R 2 in the above formula (A), R 3 , R 4 , R 5 and X are as defined for R 3 , R 4 , R 5 and X in the above formula (B). 12 . A method for producing a cobalt complex represented by the following formula (1AC), which comprises reacting a bisamide complex represented by the following formula (2) and a hetero atom-containing compound represented by the following formula (4): wherein R 1 and R 2 independently represent a C 1-6 alkyl group or a tri(C 1-6 alkyl)silyl group, D represents a neutral ligand, and n represents 0 or 1: wherein R 6 and R 8 independently represent a C 1-6 alkyl group, R 7 represents a hydrogen atom or a C 1-4 alkyl group, Y represents an oxygen atom or NR 9 , Z represents an oxygen atom or NR 10 and R 9 and R 10 independently represent a C 1-6 alkyl group; wherein R 1 and R 2 are as defined for R 1 and R 2 in the above formula (A), and R 6 , R 7 , R 8 , Y and Z are as defined for R 6 , R 7 , R 8 , Y and Z in the above formula (C). 13 . A method for producing a cobalt complex represented by the following formula (1BC), which comprises reacting a cobalt complex represented by the following formula (1AB) and a hetero atom-containing compound represented by the following formula (4): wherein R 1 and R 2 independently represent a C 1-6 alkyl group or a tri(C 1-6 alkyl)silyl group, R 3 represents a tri(C 1-6 alkyl)silyl group, R 4 and R 5 independently represent a C 1-4 alkyl group, and X represents a C 1-6 alkylene group; wherein R 6 and R 8 independently represent a C 1-6 alkyl group, R 7 represents a hydrogen atom or a C 1-4 alkyl group, Y represents an oxygen atom or NR 9 , Z represents an oxygen atom or NR 10 , and R 9 and R 10 independently represent a C 1-6 alkyl group; wherein R 3 , R 4 , R 5 and X are as defined for R 3 , R 4 , R 5 and X in the above formula (B), and R 6 , R 7 , R 8 , Y and Z are as defined for R 6 , R 7 , R 8 , Y and Z in the above formula (C). 14 . A method for producing a cobalt-containing thin film, which comprises using a cobalt complex represented by the following formula (1) for a vapor deposition method based on a chemical reaction: L 1 -Co-L 2   (1) wherein L 1 and L 2 which are d

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Classifications

  • Acetylacetone, i.e. 2,4-pentanedione · CPC title

  • by evaporation without using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title

  • Ketones containing more than one keto group · CPC title

  • from metallo-organic compounds · CPC title

  • characterized by the use of precursors specially adapted for ALD · CPC title

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What does patent US2022017553A1 cover?
To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): L 1 -Co-L 2   (1) wherein L 1 and L 2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following form…
Who is the assignee on this patent?
Tosoh Corp, Sagami Chem Res Inst
What technology area does this patent fall under?
Primary CPC classification C07F15/06. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Jan 20 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).