Enhanced ignition in inductively coupled plasmas for workpiece processing

Patent metadata

Field	Value
Publication number	US-12347677-B2
Application number	US-202318503681-A
Country	US
Kind code	B2
Filing date	Nov 7, 2023
Priority date	Aug 12, 2019
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.

First claim

What is claimed is:

1. A plasma processing apparatus, comprising:
a plasma chamber comprises a plasma region;
a dielectric wall forming at least a portion of the plasma chamber;
an inductive coupling element located proximate the dielectric wall; and
an ultraviolet light source configured to emit an ultraviolet light beam through an ultraviolet emission assembly, the ultraviolet emission assembly comprises:
one or more metal surfaces facing an interior volume of the plasma chamber, the one or more metal surfaces arranged to emit one or more electrons into the plasma region; and
one or more reflective elements configured to reflect the ultraviolet light beam onto the one or more metal surfaces.

2. The plasma processing apparatus of claim 1 , wherein the one or more metal surface configured to emit at least about 1000 electrons in a pulse into the plasma region.

3. The plasma processing apparatus of claim 1 , wherein the one or more metal surfaces are electrically grounded.

4. The plasma processing apparatus of claim 1 , wherein the ultraviolet light beam has a wavelength in a range of about 100 nanometers to about 250 nanometers.

5. The plasma processing apparatus of claim 1 , further comprising an electrostatic shield located between the dielectric wall and the inductive coupling element.

6. The plasma processing apparatus of claim 1 , wherein the ultraviolet emission assembly further comprises:
a vacuum window separating the ultraviolet light source from the one or more metal surface and the one or more reflective elements.

7. The plasma processing apparatus of claim 1 , wherein the ultraviolet emission assembly further comprises:
a vacuum window, the ultraviolet light source located adjacent the vacuum window, wherein the ultraviolet light beam passes through the vacuum window.

8. The plasma processing apparatus of claim 7 , wherein the vacuum window is at least partially transparent to the ultraviolet light beam.

9. The plasma processing apparatus of claim 8 , wherein the vacuum window comprises at least one of: synthetic quartz, UV-grade sapphire, magnesium fluoride (MgF 2 ) material, or calcium fluoride (CaF 2 ) material.

10. The plasma processing apparatus of claim 8 , wherein a space between the ultraviolet light source and the vacuum window is filled with an inert gas to reduce absorption by atmospheric oxygen, the inert gas comprising at least one of: helium, argon or nitrogen.

11. The plasma processing apparatus of claim 1 , wherein the ultraviolet light source emits the ultraviolet light beam onto the one or more metal surfaces from a location outside the plasma chamber.

12. The plasma processing apparatus of claim 1 , wherein the ultraviolet light source is a pulsed lamp.

13. The plasma processing apparatus of claim 1 , wherein the ultraviolet light source comprises at least one of: a xenon arc flashlamp, deuterium lamp, or an excimer RF/pulse xenon lamp.

14. The plasma processing apparatus of claim 13 , wherein the pulsed lamp produces a plurality of pulses with a frequency of at least about 100 per second such that the plurality of pulses contributes ultraviolet photons to be incident on the one or more metal surfaces.

15. The plasma processing apparatus of claim 1 , wherein the plasma chamber is separated from a processing chamber having a workpiece support configured to support a workpiece.

Assignees

• Beijing E Town Semiconductor Tech Co Ltd
• Mattson Tech Inc

Inventors

• Savas Stephen E
• Ma Shawming

Classifications

• H10P34/40

  with high-energy radiation · CPC title

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• H10P14/6538

  by exposure to UV light · CPC title

• H10W10/011

  of isolation regions comprising dielectric materials · CPC title

• H10W10/10

  Isolation regions comprising dielectric materials · CPC title