Deposition chambers with UV treatment and methods of use

Patent metadata

Field	Value
Publication number	US-9252024-B2
Application number	US-201313897327-A
Country	US
Kind code	B2
Filing date	May 17, 2013
Priority date	May 17, 2013
Publication date	Feb 2, 2016
Grant date	Feb 2, 2016

Abstract

Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas.

First claim

What is claimed is:

1. An apparatus for depositing a film on a substrate, the apparatus comprising:
a processing chamber having a body including walls, a bottom and a top;
a rotatable pedestal within the processing chamber to support a substrate, the rotatable pedestal having a top surface defining a lower boundary of a processing volume;
a reactive gas injector to supply a reactive gas into the processing volume of the processing chamber, the reactive gas injector in fluid communication with a reactive gas source, wherein the reactive gas injector comprises a deposition showerhead that is substantially transparent to UV radiation in a predetermined wavelength range;
a purge gas showerhead positioned above the pedestal, the purge gas showerhead substantially transparent to UV radiation in a predetermined wavelength range and in fluid communication with a purge gas, wherein the deposition showerhead is positioned at a distance between the purge gas showerhead and the pedestal to form a deposition gas plenum in fluid communication with the purge gas showerhead; and
a UV source positioned above the purge gas showerhead to direct UV radiation within the predetermined wavelength range through the purge gas showerhead and deposition showerhead toward the processing volume.

2. The apparatus of claim 1 , wherein the gas plenum is in fluid communication with one or more of a reactive gas source and a purge gas source.

3. The apparatus of claim 2 , wherein the gas plenum comprises at least one wall to separate the plenum into sections, each section in fluid communication with a reactive gas.

4. The apparatus of claim 3 , wherein there are at least two different reactive gases.

5. The apparatus of claim 3 , wherein the UV source is positioned over one of the sections.

6. The apparatus of claim 3 , wherein there is one wall splitting the gas plenum into two sections, each section in fluid communication with a different reactive gas.

7. The apparatus of claim 1 , wherein the deposition showerhead comprises quartz.

8. The apparatus of claim 1 , wherein the deposition showerhead comprises a quartz plate with a plurality of openings to allow a flow of gas and UV radiation to pass through.

9. The apparatus of claim 1 , wherein the reactive gas injector further comprises at least one injector port positioned to provide a flow of gas substantially parallel to the top surface of the pedestal.

10. The apparatus of claim 9 , comprising a plurality of injector ports separated into at least one first reactive gas port and at least one second reactive gas port, the at least one first reactive gas port in fluid communication with a first reactive gas and the at least one second reactive gas port in fluid communication with a second reactive gas.

11. The apparatus of claim 1 , wherein the UV source is positioned to expose the entire top surface of the pedestal to UV radiation simultaneously.

12. The apparatus of claim 1 , wherein the UV source comprises a plurality of lamps.

13. A method of depositing a film on a substrate, the method comprising:
(a) placing a substrate into a processing chamber;
(b) exposing the substrate to a reactive species to deposit a film on the substrate, exposing the substrate to the reactive species comprises flowing one or more reactive gas into the processing chamber through a deposition showerhead positioned between the substrate and a substantially transparent purge gas showerhead, wherein a plenum is formed between the deposition showerhead and the substantially transparent purge gas showerhead, the plenum having at least one separate section to contain the reactive gas and the purge gas flowing from the substantially transparent purge gas showerhead;
(c) directing UV radiation toward the deposited film on the substrate through the substantially transparent purge gas showerhead for a predetermined time;
(d) providing a purge gas stream through the substantially transparent purge gas showerhead toward the substrate to prevent deposition of the reactive species on the substantially transparent purge gas showerhead; and
(e) repeating (b) through (d) to deposit a film of desired thickness.

14. The method of claim 13 , wherein the film is deposited by one or more of a CVD and an ALD process.

15. The method of claim 13 , wherein the plenum holds and separates at least two different reactive gases which are flowed into separate sections of the processing chamber so that there is substantially no mixing of the reactive gases and the method further comprises rotating the substrate within the processing chamber.

16. The method of claim 13 , wherein exposing the substrate to the reactive species comprises flowing one or more reactive gas into the processing chamber through a gas injector in a side of the processing chamber.

Assignees

• Applied Materials Inc

Inventors

• Lam Hyman
• Denny Nicholas R
• Aubuchon Joseph
• Chang Mei

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10W20/0523

  by irradiating with ultraviolet or particle radiation · CPC title

• H10P14/412 Primary

  Deposition of metallic or metal-silicide materials · CPC title

• C23C16/482 Primary

  using incoherent light, UV to IR, e.g. lamps · CPC title

• H01L21/76862

  Electricity · mapped topic