Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device
US-12040433-B2 · Jul 16, 2024 · US
US12324284B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12324284-B2 |
| Application number | US-202418735999-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 6, 2024 |
| Priority date | Feb 28, 2017 |
| Publication date | Jun 3, 2025 |
| Grant date | Jun 3, 2025 |
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Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
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What is claimed is: 1. First semiconductor nanoparticles, comprising: silver (Ag), indium (In), gallium (Ga), and sulfur(S), wherein the first semiconductor nanoparticles emit light having an emission peak with a wavelength in a range from 500 nm to less than 590 nm and a half bandwidth of 70 nm or less upon irradiation of the light. 2. The first semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is from 0.2 to 0.9. 3. The first semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.55. 4. The first semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.3 to 0.55, and a ratio of a number of Ga atoms to a total number of In and Ga atoms is from 0.5 to 0.9. 5. The first semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.27, and a ratio of a number of Ga atoms to a total number of In and Ga atoms is from 0.25 to 0.75. 6. Second semiconductor nanoparticles, comprising: the first semiconductor nanoparticles according to claim 1 ; and a semiconductor material having a band gap energy greater than a band gap energy of the first semiconductor nanoparticles. 7. The second semiconductor nanoparticles according to claim 6 , wherein the semiconductor material contains a group 13 element in a periodic table of chemical elements and a group 16 element in the periodic table of chemical elements. 8. The second semiconductor nanoparticles according to claim 7 , wherein the semiconductor material contains at least Ga as the group 13 element. 9. The second semiconductor nanoparticles according to claim 8 , wherein the semiconductor material contains at least S as the group 16 element. 10. A light conversion member comprising the first semiconductor nanoparticles according to claim 1 . 11. The light conversion member according to claim 10 , further comprising at least one selected from a group consisting of another semiconductor nanoparticles other than the first semiconductor nanoparticles, an organic fluorescent material, and an inorganic fluorescent material. 12. The light conversion member according to claim 10 , wherein the light conversion member is a sheet or plate-like member. 13. A light-emitting device comprising: the light conversion member according to claim 10 ; and a semiconductor light-emitting element having a peak wavelength of from 400 nm to 490 nm. 14. A liquid crystal display comprising the light-emitting device according to claim 13 .
not being in contact with the bodies · CPC title
within the light-emitting regions, e.g. having quantum confinement structures · CPC title
Manufacture or treatment · CPC title
containing gallium, indium or thallium · CPC title
Use of particular materials as binders, particle coatings or suspension media therefor · CPC title
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