Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device

US12324284B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12324284-B2
Application numberUS-202418735999-A
CountryUS
Kind codeB2
Filing dateJun 6, 2024
Priority dateFeb 28, 2017
Publication dateJun 3, 2025
Grant dateJun 3, 2025

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

First claim

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What is claimed is: 1. First semiconductor nanoparticles, comprising: silver (Ag), indium (In), gallium (Ga), and sulfur(S), wherein the first semiconductor nanoparticles emit light having an emission peak with a wavelength in a range from 500 nm to less than 590 nm and a half bandwidth of 70 nm or less upon irradiation of the light. 2. The first semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is from 0.2 to 0.9. 3. The first semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.55. 4. The first semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.3 to 0.55, and a ratio of a number of Ga atoms to a total number of In and Ga atoms is from 0.5 to 0.9. 5. The first semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.27, and a ratio of a number of Ga atoms to a total number of In and Ga atoms is from 0.25 to 0.75. 6. Second semiconductor nanoparticles, comprising: the first semiconductor nanoparticles according to claim 1 ; and a semiconductor material having a band gap energy greater than a band gap energy of the first semiconductor nanoparticles. 7. The second semiconductor nanoparticles according to claim 6 , wherein the semiconductor material contains a group 13 element in a periodic table of chemical elements and a group 16 element in the periodic table of chemical elements. 8. The second semiconductor nanoparticles according to claim 7 , wherein the semiconductor material contains at least Ga as the group 13 element. 9. The second semiconductor nanoparticles according to claim 8 , wherein the semiconductor material contains at least S as the group 16 element. 10. A light conversion member comprising the first semiconductor nanoparticles according to claim 1 . 11. The light conversion member according to claim 10 , further comprising at least one selected from a group consisting of another semiconductor nanoparticles other than the first semiconductor nanoparticles, an organic fluorescent material, and an inorganic fluorescent material. 12. The light conversion member according to claim 10 , wherein the light conversion member is a sheet or plate-like member. 13. A light-emitting device comprising: the light conversion member according to claim 10 ; and a semiconductor light-emitting element having a peak wavelength of from 400 nm to 490 nm. 14. A liquid crystal display comprising the light-emitting device according to claim 13 .

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Classifications

  • not being in contact with the bodies · CPC title

  • within the light-emitting regions, e.g. having quantum confinement structures · CPC title

  • Manufacture or treatment · CPC title

  • containing gallium, indium or thallium · CPC title

  • C09K11/02Primary

    Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

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What does patent US12324284B2 cover?
Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diame…
Who is the assignee on this patent?
National Univ Corporation Tokai National Higher Education And Research System, Univ Osaka, Nichia Corp
What technology area does this patent fall under?
Primary CPC classification C09K11/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 03 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).