Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device

Patent metadata

Field	Value
Publication number	US-11101413-B2
Application number	US-201816489214-A
Country	US
Kind code	B2
Filing date	Feb 28, 2018
Priority date	Feb 28, 2017
Publication date	Aug 24, 2021
Grant date	Aug 24, 2021

Abstract

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

First claim

What is claimed is:

1. Semiconductor nanoparticles, comprising:
Ag, In, Ga, and S,
wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less,
wherein the semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and
wherein the semiconductor nanoparticles have an average particle diameter of 10 nm or less.

2. The semiconductor nanoparticles according to claim 1 , wherein the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.2 to 0.9.

3. The semiconductor nanoparticles according to claim 2 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.55.

4. The semiconductor nanoparticles according to claim 3 , wherein the ratio of the number of Ag atoms to the total number of Ag, In, and Ga atoms is from 0.3 to 0.55, and the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.5 to 0.9.

5. The semiconductor nanoparticles according to claim 3 , wherein the ratio of the number of Ag atoms to the total number of Ag, In, and Ga atoms is from 0.05 to 0.27, and the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.25 to 0.75.

6. The semiconductor nanoparticles according to claim 1 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.55.

7. Core-shell semiconductor nanoparticles, comprising:
a core containing the semiconductor nanoparticles according to claim 1 ; and
a shell containing a semiconductor material essentially composed of a Group 13 element and a Group 16 element and arranged on a surface of the core, and
wherein the core-shell semiconductor nanoparticles emit light upon irradiation of light.

8. The semiconductor nanoparticles according to claim 7 , wherein the Group 13 element contained in the shell is Ga.

9. The semiconductor nanoparticles according to claim 7 , wherein the
Group 16 element contained in the shell is S.

10. The semiconductor nanoparticles according to claim 7 , wherein a
compound containing a Group 15 element that contains at least P with a negative oxidation number is arranged on a surface of the shell.

11. Core-shell semiconductor nanoparticles, comprising:
a core containing the semiconductor nanoparticles according to claim 1 ; and
a shell containing a semiconductor material essentially composed of a Group 1 element, a Group 13 element, and a Group 16 element and arranged on a surface of the core, and
wherein the core-shell semiconductor nanoparticles emit light upon irradiation of light.

12. The semiconductor nanoparticles according to claim 11 , wherein a
compound containing a Group 15 element that contains at least P with a negative oxidation number is arranged on a surface of the shell.

13. A light-emitting device, comprising:
a light conversion member containing the semiconductor nanoparticles according to claim 1 ; and
a semiconductor light-emitting element.

14. The light-emitting device according to claim 13 , wherein the semiconductor light-emitting element is an LED chip.

15. A method of producing semiconductor nanoparticles, the method comprising:
preparing a mixture containing silver acetate, indium acetylacetonate, gallium acetylacetonate, a sulfur source, and an organic solvent; and
heat-treating the mixture.

16. The method according to claim 15 , wherein the mixture is heat-treated at a temperature of from 290° C. to 310° C. for 5 min or more.

17. The method according to claim 15 , wherein the organic solvent contains at least one thiol selected from thiols having a hydrocarbon group with a carbon number of from 4 to 20, and at least one amine selected from amines having a hydrocarbon group with a carbon number of from 4 to 20.

18. The method according to claim 15 , wherein the sulfur source is a simple substance of sulfur.

Assignees

• National Univ Corporation Tokai National Higher Education And Research System
• Univ Osaka
• Nichia Corp
• National Univ Corporation Tokai National

Inventors

• Torimoto Tsukasa
• Kameyama Tatsuya
• Kishi Marino
• Miyamae Chie
• Kuwabata Susumu
• Uematsu Taro
• Oyamatsu Daisuke
• Niki Kenta

Classifications

• Y02B20/00

  Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps · CPC title

• H10H20/851

  Wavelength conversion means · CPC title

• H10H20/8515

  not being in contact with the bodies · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/01

  Manufacture or treatment · CPC title