Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device

Patent metadata

Field	Value
Publication number	US-12040433-B2
Application number	US-202318191829-A
Country	US
Kind code	B2
Filing date	Mar 28, 2023
Priority date	Feb 28, 2017
Publication date	Jul 16, 2024
Grant date	Jul 16, 2024

Abstract

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

First claim

What is claimed is:

1. Core-shell semiconductor nanoparticles, comprising:
a core containing Ag, In, Ga, and S;
a shell containing a Group 13 element and a Group 16 element,
wherein the core-shell semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less upon irradiation of light.

2. The core-shell semiconductor nanoparticles according to claim 1 , wherein the core has a composition of a ratio of the number of Ga atoms to the total number of In and Ga atoms being from 0.2 to 0.9.

3. The core-shell semiconductor nanoparticles according to claim 2 , wherein the core has a composition of a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms being from 0.05 to 0.55.

4. The core-shell semiconductor nanoparticles according to claim 1 , wherein the core has a composition of a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms being from 0.05 to 0.55.

5. The core-shell semiconductor nanoparticles according to claim 1 , wherein
the core has a composition of a ratio of the number of Ag atoms to the total number of Ag, In, and Ga atoms being from 0.3 to 0.55, and
a ratio of the number of Ga atoms to the total number of In and Ga atoms being from 0.5 to 0.9.

6. The core-shell semiconductor nanoparticles according to claim 1 , wherein the core has a composition of a ratio of the number of Ag atoms to the total number of Ag, In, and Ga atoms being from 0.05 to 0.27, and
a ratio of the number of Ga atoms to the total number of In and Ga atoms being from 0.25 to 0.75.

7. The core-shell semiconductor nanoparticles according to claim 1 , wherein the shell further contains a Group 1 element.

8. The core-shell semiconductor nanoparticles according to claim 1 , wherein the shell contains at least Ga as the Group 13 element.

9. The core-shell semiconductor nanoparticles according to claim 1 ,
wherein the shell contains at least S as the Group 16 element.

10. The core-shell semiconductor nanoparticles according to claim 1 , wherein the shell contains a semiconductor having greater band gap energy than the core.

Assignees

• National Univ Corporation Tokai National Higher Education And Research System
• Univ Osaka
• Nichia Corp

Inventors

• Torimoto Tsukasa
• Kameyama Tatsuya
• Kishi Marino
• Miyamae Chie
• Kuwabata Susumu
• Uematsu Taro
• Oyamatsu Daisuke
• Niki Kenta

Classifications

• C09K11/02 Primary

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

• H10H20/8512 Primary

  Wavelength conversion materials · CPC title

• H10H20/8515

  not being in contact with the bodies · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/01

  Manufacture or treatment · CPC title