Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device

Patent metadata

Field	Value
Publication number	US-2020006601-A1
Application number	US-201816489214-A
Country	US
Kind code	A1
Filing date	Feb 28, 2018
Priority date	Feb 28, 2017
Publication date	Jan 2, 2020
Grant date	—

Abstract

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

First claim

What is claimed is:

1 .- 16 . (canceled)

17 . Semiconductor nanoparticles, comprising:
Ag, In, Ga, and S, wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less, wherein the semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and wherein the semiconductor nanoparticles have an average particle diameter of 10 nm or less.

18 . The semiconductor nanoparticles according to claim 17 , wherein the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.2 to 0.9.

19 . The semiconductor nanoparticles according to claim 17 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.55.

20 . The semiconductor nanoparticles according to claim 18 , wherein a ratio of a number of Ag atoms to a total number of Ag, In, and Ga atoms is from 0.05 to 0.55.

21 . The semiconductor nanoparticles according to claim 17 , wherein
the ratio of the number of Ag atoms to the total number of Ag, In, and Ga atoms is from 0.3 to 0.55, and the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.5 to 0.9.

22 . The semiconductor nanoparticles according to claim 17 , wherein the ratio of the number of Ag atoms to the total number of Ag, In, and Ga atoms is from 0.05 to 0.27, and
the ratio of the number of Ga atoms to the total number of In and Ga atoms is from 0.25 to 0.75.

23 . Core-shell semiconductor nanoparticles, comprising:
a core containing the semiconductor nanoparticles according to claim 17 ; and a shell containing a semiconductor material essentially composed of a Group 13 element and a Group 16 element and arranged on a surface of the core, and wherein the core-shell semiconductor nanoparticles emit light upon irradiation of light.

24 . Core-shell semiconductor nanoparticles, comprising:
a core containing the semiconductor nanoparticles according to claim 17 ; and a shell containing a semiconductor material essentially composed of a Group 1 element, a Group 13 element, and a Group 16 element and arranged on a surface of the core, and wherein the core-shell semiconductor nanoparticles emit light upon irradiation of light.

25 . The semiconductor nanoparticles according to claim 23 , wherein the Group 13 element contained in the shell is Ga.

26 . The semiconductor nanoparticles according to claim 23 , wherein the Group 16 element contained in the shell is S.

27 . The semiconductor nanoparticles according to claim 23 , wherein a compound containing a Group 15 element that contains at least P with a negative oxidation number is arranged on a surface of the shell.

28 . The semiconductor nanoparticles according to claim 24 , wherein a compound containing a Group 15 element that contains at least P with a negative oxidation number is arranged on a surface of the shell.

29 . A method of producing semiconductor nanoparticles, the method comprising:
preparing a mixture containing silver acetate, indium acetylacetonate, gallium acetylacetonate, a sulfur source, and an organic solvent; and heat-treating the mixture.

30 . The method according to claim 29 , wherein the mixture is heat-treated at a temperature of from 290° C. to 310° C. for 5 min or more.

31 . The method according to claim 29 , wherein the organic solvent contains at least one thiol selected from thiols having a hydrocarbon group with a carbon number of from 4 to 20, and at least one amine selected from amines having a hydrocarbon group with a carbon number of from 4 to 20.

32 . The method according to claim 29 , wherein the sulfur source is a simple substance of sulfur.

33 . A light-emitting device, comprising:
a light conversion member containing the semiconductor nanoparticles according to claim 17 ; and a semiconductor light-emitting element.

34 . The light-emitting device according to claim 33 , wherein the semiconductor light-emitting element is an LED chip.

Assignees

• Univ Nagoya Nat Univ Corp
• Univ Osaka
• Nichia Corp

Inventors

• Torimoto Tsukasa
• Kameyama Tatsuya
• Kishi Marino
• Miyamae Chie
• Kuwabata Susumu
• Uematsu Taro
• Oyamatsu Daisuke
• Niki Kenta

Classifications

• C09K11/621

  Chalcogenides · CPC title

• C09K11/62 Primary

  containing gallium, indium or thallium · CPC title

• H01L33/502 Primary

  Electricity · mapped topic

• H01L33/06

  Electricity · mapped topic

• H01L33/005

  Electricity · mapped topic