Switching device and electronic circuit

Patent metadata

Field	Value
Publication number	US-12316307-B2
Application number	US-202418643469-A
Country	US
Kind code	B2
Filing date	Apr 23, 2024
Priority date	Nov 20, 2013
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

First claim

The invention claimed is:

1. An electronic circuit comprising:
a switching device adapted to flow a current;
an overcurrent detection circuit capable of detecting whether the current flowing through the switching device is an overcurrent; and
an overcurrent protection circuit capable of blocking the current flowing through the switching device if the detection circuit detected the current is an overcurrent,
wherein the switching device comprises:
a switching semiconductor chip having a gate electrode, a source electrode and a drain electrode;
a gate terminal electrically connected to the gate electrode;
a source terminal electrically connected to the source electrode;
a drain terminal electrically connected to the drain electrode;
a sense source terminal electrically connected to the source electrode;
a conductor having a resistance and is interposed in a current path between the source terminal and the source electrode, and is interposed in a current path between the sense source terminal and the source electrode,
the sense source terminal is not directly connected to the source electrode, but is indirectly connected to the source electrode through the conductor, and
the sense source terminal is electrically connected to the overcurrent detection circuit.

2. The electronic circuit according to claim 1 , including a resin package sealing the switching semiconductor chip and the conductor.

3. The electronic circuit according to claim 2 , wherein the switching semiconductor chip is SiC MOSFET.

4. The electronic circuit according to claim 3 further comprising a switching module that includes a plurality of the switching devices that are connected in parallel,
wherein a sense source terminal of the switching module is electrically connected to the overcurrent detection circuit.

5. An inverter circuit including:
a plurality of switching devices, each of the switching devices is adapted to carry a current;
a gate drive circuit; and
a control section,
wherein the gate drive circuit comprises:
an overcurrent detection circuit capable of detecting whether an overcurrent is flowing through at least one of the switching devices; and
an overcurrent protection circuit capable of blocking the current flowing through the switching device if the overcurrent detection circuit detected that the current is an overcurrent;
each of the switching device comprises:
a switching semiconductor chip having a gate electrode, a source electrode and a drain electrode;
a gate terminal electrically connected to the gate electrode;
a source terminal electrically connected to the source electrode;
a drain terminal electrically connected to the drain electrode;
a sense source terminal electrically connected to the source electrode;
a conductor having a resistance and is interposed in a current path between the source terminal and the source electrode, and is interposed in a current path between the sense source terminal and the source electrode; and
a resin package sealing the switching semiconductor chip and the conductor;
the sense source terminal is not directly connected to the source electrode, but is indirectly connected to the source electrode through the conductor; and
the sense source terminal in each of the switching devices is electrically connected to the overcurrent detection circuit.

6. The inverter circuit according to claim 5 , wherein the switching semiconductor chips is SiC MOSFET.

Assignees

• Rohm Co Ltd

Inventors

• Hayashiguchi Masashi
• Ino Kazuhide

Classifications

• H10W72/07653

  changes in shapes · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/886

  Die-attach connectors and strap connectors · CPC title

• H10W72/871

  Bond wires and strap connectors · CPC title