Switching device and electronic circuit

Patent metadata

Field	Value
Publication number	US-12068741-B2
Application number	US-202318306713-A
Country	US
Kind code	B2
Filing date	Apr 25, 2023
Priority date	Nov 20, 2013
Publication date	Aug 20, 2024
Grant date	Aug 20, 2024

Abstract

A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14 , a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16 ) that is interposed in a current path between the sense source terminal 4 and the source pad 13 , is separated from sense source terminal 4 , and has a predetermined size.

First claim

The invention claimed is:

1. A switching device including: a switching element which has a first electrode, a second electrode and a third electrode and in which on-off control is performed between the second electrode and the third electrode by applying a drive voltage between the first electrode and the second electrode in a state where a potential difference is applied between the second electrode and the third electrode;
a second terminal for outputting the current flowing by the on control and electrically connected to the second electrode;
a fourth terminal electrically connected to the second electrode; and
a resistance interposed in a current path between the fourth terminal and the second electrode,
wherein instead of directly connecting the fourth terminal and the switching element, the fourth terminal and the switching element are connected via the second terminal and the resistance.

2. The switching device according to claim 1 , including: a resin package sealing the switching element, the fourth terminal and the resistance.

3. The switching device according to claim 1 , wherein the switching device comprises SiC MOSFETs.

4. The switching device according to claim 3 , wherein the first electrode is a gate electrode, the second electrode is a source electrode, the third electrode is a drain electrode, and the fourth terminal is a sense source terminal.

5. The switching device according to claim 1 , wherein the first electrode is a gate electrode, the second electrode is an emitter electrode, the third electrode is a collector electrode, and the fourth terminal is a sense emitter terminal.

6. The switching device according to claim 1 , wherein the first electrode is a base electrode, the second electrode is an emitter electrode, the third electrode is a collector electrode, and the fourth terminal is a sense emitter terminal.

7. The switching device according to claim 2 , including:
a first terminal electrically connected to the first electrode; and
a third terminal electrically connected to the third electrode;
wherein the first terminal, the second electrode, the third electrode and the fourth terminal each have a sealed portion sealed in the resin package and an exposed portion exposed from the resin package.

Assignees

• Rohm Co Ltd

Inventors

• Hayashiguchi Masashi
• Ino Kazuhide

Classifications

• H10W72/07653

  changes in shapes · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/886

  Die-attach connectors and strap connectors · CPC title

• H10W72/871

  Bond wires and strap connectors · CPC title