Semiconductor device

Patent metadata

Field	Value
Publication number	US-9607940-B2
Application number	US-201314901424-A
Country	US
Kind code	B2
Filing date	Jul 5, 2013
Priority date	Jul 5, 2013
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

A semiconductor device according to an embodiment is a semiconductor device in which a semiconductor chip mounted on a chip mounting part is sealed by resin and a first member is fixed to a chip mounting surface side between a peripheral portion of the semiconductor chip and a peripheral portion of the chip mounting part. Also, the first member is sealed by the resin. Also, a length of the first part of the chip mounting part in the first direction is larger than a length of the semiconductor chip in the first direction, in a plan view.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor chip having a first surface on which a first electrode pad is formed, and a second surface opposite to the first surface;
a chip mounting part having a first main surface on which the semiconductor chip is mounted via an adhesive material, and a second main surface opposite to the first main surface;
a plurality of external terminals extended in a first direction, and arranged side-by-side with the chip mounting part in the first direction, and arranged side-by-side with each other in a second direction perpendicular to the first direction, in a plan view;
a first conductive member electrically connecting the first electrode pad of the semiconductor chip with a first external terminal of the plurality of external terminals; and
a sealing body sealing the semiconductor chip, the first main surface of the chip mounting part, a part of each of the plurality of external terminals and the first conductive member,
wherein the chip mounting part has a first part, and a second part arranged between the first part and the first external terminal,
wherein the semiconductor chip is mounted on the first main surface of the second part,
wherein a plurality of first members is fixed onto the first main surface of the first part,
wherein each of the first members is electrically separated from terminals other than the chip mounting part, and
wherein, in the plan view, a length of the first part of the chip mounting part in the first direction is longer than a length of the semiconductor chip in the first direction.

2. The semiconductor device according to claim 1 ,
wherein the length of the first part of the chip mounting part in the first direction is longer than a distance from a peripheral portion of the semiconductor chip to a peripheral portion of the chip mounting part in the second direction, in the plan view.

3. The semiconductor device according to claim 2 ,
wherein a distance from the semiconductor chip to one of the first members in the first direction is shorter than a length of the semiconductor chip in the first direction, in the plan view.

4. The semiconductor device according to claim 3 ,
wherein a length of each of the first members in the second direction is longer than the length of the semiconductor chip in the second direction, in the plan view.

5. The semiconductor device according to claim 4 ,
wherein a part of the second main surface of the chip mounting part is exposed from the sealing body.

6. The semiconductor device according to claim 3 ,
wherein each of the first members is fixed in the first direction at a plurality of positions in the plan view, and respective separation distances of the first members are shorter than the length of the semiconductor chip in the first direction.

7. The semiconductor device according to claim 1 ,
wherein each of the first members is formed of a same material as the adhesive material.

8. The semiconductor device according to claim 7 ,
wherein each of the first members and the adhesive material are a conductive adhesive material containing a plurality of silver particles (Ag filler).

9. The semiconductor device according to claim 1 ,
wherein a thickness of the semiconductor chip is larger than a thickness of the chip mounting part.

10. The semiconductor device according to claim 9 ,
wherein the thickness of the semiconductor chip is equal to or less than 100 μm.

11. The semiconductor device according to claim 1 ,
wherein a second electrode pad electrically connected to a second external terminal of the plurality of external terminals is formed in the first surface of the semiconductor chip,
wherein a third electrode electrically connected to the first main surface of the chip mounting part via the adhesive material is formed in the second surface of the semiconductor chip, and
wherein a part of the second main surface of the chip mounting part is exposed from the sealing body.

12. The semiconductor device according to claim 11 ,
wherein the semiconductor chip includes a MOSFET with a vertical channel structure,
wherein the first electrode pad is electrically connected to a source electrode of the MOSFET,
wherein the second electrode pad is electrically connected to a gate electrode of the MOSFET, and
the third electrode is a gate electrode of the MOSFET.

13. The semiconductor device according to claim 11 ,
wherein the first external terminal, the second external terminal and the part exposed from the sealing body of the second main surface of the chip mounting part have a part capable of being soldered in a case of packaging the semiconductor device in a packaging substrate.

14. The semiconductor device according to claim 1 ,
wherein a second member made of a material different from the first members is fixed onto the first main surface of the first part of the chip mounting part through each of the first members.

15. The semiconductor device according to claim 1 ,
wherein a metal film is formed on the first main surface of the chip mounting part, and
wherein the adhesive material and each of the first members are fixed onto the metal film.

16. A semiconductor device comprising:
a semiconductor chip including a MOSFET with a vertical channel structure and having a first surface on which a source electrode pad and a gate electrode pad are formed and a second surface opposite to the first surface and on which a drain electrode is formed;
a chip mounting part having a first main surface on which the semiconductor chip is mounted via an adhesive material and which is electrically connected, and a second main surface opposite to the first main surface;
a plurality of leads extended in a first direction, and arranged side-by-side with the chip mounting part in the first direction, and arranged side-by-side with each other in a second direction perpendicular to the first direction, in a plan view;
a first conductive member electrically connecting the source electrode pad of the semiconductor chip with a source lead of the plurality of leads;
a second conductive member electrically connecting the gate electrode pad of the semiconductor chip with a gate lead of the plurality of leads; and
a sealing body sealing the semiconductor chip, the first main surface of the chip mounting part, a part of each of the plurality of leads, the first conductive member, and the second conductive member,
wherein a part of the second main surface of the chip mounting part is exposed from the sealing body,
wherein the chip mounting part has a first part and a second part arranged between the first part and the source lead,
wherein the semiconductor chip is mounted on the first main surface of the second part,
wherein a plurality of first members is fixed onto the first main surface of the first part,
wherein each of the first members is formed of the same material as the adhesive material electrically separated from leads other than the chip mounting part, and
wherein, in the plan view, a length of the first part of the chip mounting part in the first direction is longer than a length of the semiconductor chip in the first direction.

17. The semiconductor device according to claim 16 ,
wherein the adhesive material and each of the first members are a conductive adhesive material containing a plurality of silver particles.

18. The semiconductor device according to claim 17 ,
wherein the first conductive member is a metal foil and the second conductive member is a metal wire.

Assignees

• Renesas Electronics Corp

Inventors

• Yato Yuichi
• Oka Hiroi
• Okunishi Noriko
• Takada Keita

Classifications

• H10W90/766

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W74/016

  using moulds · CPC title