Method of manufacturing a hybrid device

US12300759B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12300759-B2
Application numberUS-202217573044-A
CountryUS
Kind codeB2
Filing dateJan 11, 2022
Priority dateJan 26, 2021
Publication dateMay 13, 2025
Grant dateMay 13, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of manufacturing a micro-light-emitting diode display includes processing a wafer to form a plurality of functional chips integral with the wafer. A plurality of wafer tiles is defined in the wafer, wherein each wafer tile is composed of a cluster of functional chips. The wafer tiles are singulated by wafer dicing. A plurality of separate wafer tiles is bonded to a semiconductor wafer by hybrid bonding. The functional chips are singulated together with chips of the semiconductor wafer by dicing the bonded-together wafer tiles and semiconductor wafer.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a hybrid device, the method comprising: processing a wafer to form a plurality of functional chips integral with the wafer; defining a plurality of wafer tiles in the wafer, wherein each wafer tile is composed of a cluster of functional chips; singulating the wafer tiles by wafer dicing; bonding a plurality of separate wafer tiles to a semiconductor wafer by hybrid bonding; and singulating the functional chips together with chips of the semiconductor wafer by dicing the bonded-together wafer tiles and the semiconductor wafer. 2. The method of claim 1 , wherein each wafer tile has a polygonal shape. 3. The method of claim 1 , wherein a first lateral dimension of each wafer tile is in a range between 20 and 60 mm and a second lateral dimension of each wafer tile is in a range between 20 and 60 mm. 4. The method of claim 1 , wherein the number of separate wafer tiles bonded to the semiconductor wafer is between 10 and 50. 5. The method of claim 1 , wherein the semiconductor wafer includes integrated circuits for controlling each functional chip of the plurality of functional chips. 6. The method of claim 1 , wherein the wafer and the semiconductor wafer exhibit different thermomechanical properties. 7. The method of claim 1 , wherein the wafer comprises a III-V semiconductor layer. 8. The method of claim 1 , wherein the semiconductor wafer is a Si wafer. 9. The method of claim 1 , wherein the wafer is a micro-LED wafer and each functional chip of the plurality of functional chips contains a micro-LED array. 10. The method of claim 9 , wherein each wafer tile comprises a substrate, a first semiconductor layer of a first dopant type arranged over the substrate, and a second semiconductor layer of a second dopant type arranged over the first semiconductor layer, the method further comprising: removing the substrates of each wafer tile after bonding the plurality of separate wafer tiles to the semiconductor wafer. 11. The method of claim 10 , further comprising: thinning the wafer tiles at a surface available after removing the substrates of each wafer tile. 12. The method of claim 10 , further comprising: forming a common front side electrode layer on a surface of each wafer tile available after removing the substrates of each wafer tile or after thinning. 13. The method of claim 9 , wherein each micro-LED array of a wafer tile has a common front side electrode layer electrically connected to all micro-LEDs of the micro-LED array, and wherein common front side electrode layers of different micro-LED arrays are disconnected from each other. 14. The method of claim 13 , wherein the common front side electrode layer of each micro-LED array is formed by metal deposition and/or transparent conducting oxide generation.

Assignees

Inventors

Classifications

  • Direct bonding of chips, wafers or substrates · CPC title

  • H10W90/00Primary

    Package configurations · CPC title

  • Bond pads, in general · CPC title

  • with a substrate not being Group III-V materials · CPC title

  • Manufacture or treatment · CPC title

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Frequently asked questions

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What does patent US12300759B2 cover?
A method of manufacturing a micro-light-emitting diode display includes processing a wafer to form a plurality of functional chips integral with the wafer. A plurality of wafer tiles is defined in the wafer, wherein each wafer tile is composed of a cluster of functional chips. The wafer tiles are singulated by wafer dicing. A plurality of separate wafer tiles is bonded to a semiconductor wafer …
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 13 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).