Plasma processing method and plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-12243718-B2
Application number	US-202017599912-A
Country	US
Kind code	B2
Filing date	Mar 23, 2020
Priority date	Apr 3, 2019
Publication date	Mar 4, 2025
Grant date	Mar 4, 2025

Abstract

There is provided a plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage. The method comprises: preparing the substrate on the stage; controlling a phase of at least one of the plurality of electromagnetic waves radiated from the plurality of radiating devices; radiating the plurality of electromagnetic waves into the chamber from the plurality of radiating devices; and processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

First claim

The invention claimed is:

1. A plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage, the method comprising:
preparing the substrate on the stage;
controlling a phase of at least one of the plurality of electromagnetic waves from the plurality of radiating devices;
propagating the plurality of electromagnetic waves from the plurality of radiating devices into a space above the dielectric window for focusing electromagnetic waves, concentrating the electromagnetic waves from the plurality of radiating devices at a predetermined position on the dielectric window, and radiating the concentrated electromagnetic waves into a space below the dielectric window, wherein the dielectric window is a partition plate that divides an inside of the chamber into the space above the dielectric window and the space below the dielectric window; and
processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

2. The plasma processing method of claim 1 , wherein the dielectric window is separated from the plurality of radiating devices and the stage, and
wherein in said processing the substrate, the localized plasma is generated in the space below the dielectric window.

3. The plasma processing method of claim 2 , wherein a vertical distance from the plurality of radiating devices to the dielectric window is greater than ¼ of a wavelength λ of the electromagnetic wave.

4. The plasma processing method of claim 1 , wherein each of the plurality of radiating devices has a monopole antenna.

5. The plasma processing method of claim 1 , wherein a distance from a center of the radiating device to a center of an adjacent radiating device is smaller than ½ of a wavelength λ of the electromagnetic wave.

6. The plasma processing method of claim 1 , wherein the plurality of electromagnetic waves have a frequency of 100 MHz or higher.

7. The plasma processing method of claim 6 , wherein the plurality of electromagnetic waves have a frequency of 1 GHz to 3 GHz.

8. The plasma processing method of claim 1 , wherein a region where the localized plasma is generated is controlled by changing phases of the plurality of electromagnetic waves over time.

9. A plasma processing apparatus comprising:
a chamber;
a stage on which a substrate is placed in the chamber;
a plurality of radiating devices configured to radiate a plurality of electromagnetic waves;
a dielectric window disposed between the plurality of the radiating devices and the stage, wherein the dielectric window is a partition plate that divides an inside of the chamber into a space above the dielectric window for focusing electromagnetic waves and a space below the dielectric window; and
a controller,
wherein the controller is configured to control:
preparing the substrate on the stage;
controlling a phase of at least one of the plurality of electromagnetic waves from the plurality of radiating devices;
propagating the plurality of electromagnetic waves from the plurality of radiating devices into the space above the dielectric window, concentrating the electromagnetic waves from the plurality of radiating devices at a predetermined position on the dielectric window, and radiating the concentrated electromagnetic waves into the space below the dielectric window; and
processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

Assignees

• Tokyo Electron Ltd

Inventors

• Kamata Eiki
• Sato Mikio
• Ikeda Taro
• Yamamoto Nobuhiko

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H01J2237/334

  Etching · CPC title

• H01J2237/332

  Coating · CPC title

• H01J37/32238

  Windows · CPC title

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title