Plasma processing apparatus and high frequency generator

Patent metadata

Field	Value
Publication number	US-10074524-B2
Application number	US-201314386648-A
Country	US
Kind code	B2
Filing date	Mar 25, 2013
Priority date	Mar 26, 2012
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.

First claim

The invention claimed is:

1. A plasma processing apparatus which processes an object to be processed using plasma, the plasma processing apparatus comprising:
a processing container within which a plasma processing is performed; and
a plasma generating mechanism including a high frequency generator disposed outside the processing container and configured to generate a high frequency wave including microwave, the plasma generating mechanism being configured to generate plasma within the processing container using the high frequency wave generated by the high frequency generator,
wherein the plasma generating mechanism further includes a dielectric window disposed in an upper portion of the processing container and configured to introduce the high frequency wave generated by the high frequency generator into the processing container, and a circular concave portion recessed in a tapered shape is provided on a portion of a bottom surface of the dielectric window, and
wherein the high frequency generator includes:
a high frequency oscillator configured to oscillate the high frequency wave;
a determining mechanism including a first determining section configured to determine a state of the high frequency oscillator as compared to an initial state of the high frequency oscillator based on a fundamental frequency component and a different frequency component which are included in the high frequency wave oscillated by the high frequency oscillator; and
a notifying mechanism configured to perform notification of a determination result made by the determining mechanism such that the high frequency oscillator is replaced at a timing except for a time period during which the plasma processing is performed,
wherein the first determining section includes:
(i) a spectrum level detecting section configured to detect a spectrum level of the fundamental frequency component and a spectrum level of the different frequency component, and
(ii) a spectrum level comparing section configured to compare the spectrum level of the fundamental frequency component and the spectrum level of the different frequency component which are detected by the spectrum level detecting section, and

wherein the spectrum level of the fundamental frequency component is a decibel value corresponding to a magnitude of the fundamental frequency component, and the spectrum level of the different frequency component is a decibel value corresponding to a magnitude of the different frequency component.

2. The plasma processing apparatus of claim 1 , wherein the spectrum level comparing section calculates a difference between the decibel value of the spectrum level of the fundamental frequency component and the decibel value of the spectrum level of the different frequency component which are detected by the spectrum level detecting section, and determines whether the calculated difference is smaller than a predetermined value.

3. The plasma processing apparatus of claim 2 , wherein the predetermined value is 40 dBm.

4. The plasma processing apparatus of claim 1 , wherein the high frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high frequency oscillator to a matcher positioned at a load side, and a waveguide provided between the high frequency oscillator and the isolator and configured to propagate the high frequency wave to the isolator side, and
the spectrum level detecting section detects the spectrum level of the fundamental frequency component and the spectrum level of the different frequency component using a high frequency wave branched from the waveguide.

5. The plasma processing apparatus of claim 1 , wherein the high frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high frequency oscillator to a matcher positioned at a load side, and a directional coupler configured to extract a part of a high frequency wave matched by the matcher, and
the spectrum level detecting section detects the spectrum level of the fundamental frequency component and the spectrum level of the different frequency component using the high frequency wave extracted from the directional coupler.

6. The plasma processing apparatus of claim 1 , wherein the determining mechanism includes a second determining section configured to determine the state of the high frequency oscillator based on an initial frequency of a fundamental wave which is oscillated from the high frequency oscillator.

7. The plasma processing apparatus of claim 6 , wherein the second determining section includes a frequency detecting unit configured to detect the initial frequency of the fundamental wave and a current frequency of the fundamental wave, and a frequency comparing unit configured to compare the initial frequency of the fundamental wave and the current frequency of the fundamental wave which are detected by the frequency detecting unit.

8. The plasma processing apparatus of claim 6 , wherein the high frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high frequency oscillator to a matcher positioned at a load side, and a waveguide provided between the high frequency oscillator and the isolator and configured to propagate the high frequency wave to the isolator side, and
the frequency detecting unit detects the initial frequency of the fundamental wave and the current frequency of the fundamental wave using the high frequency wave branched from the waveguide.

9. The plasma processing apparatus of claim 7 , wherein the high frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high frequency oscillator to a matcher positioned at a load side, and a directional coupler provided between the isolator and the load and configured to extract a part of a high frequency wave matched by the matcher, and
the frequency detecting unit detects the initial frequency of the fundamental wave and the current frequency of the fundamental wave using the high frequency wave extracted from the directional coupler.

10. The plasma processing apparatus of claim 7 , wherein the high frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high frequency oscillator to a matcher positioned at a load side, a waveguide provided between the high frequency oscillator and the isolator and configured to propagate the high frequency wave to the isolator side, and a directional coupler provided between the isolator and the load and configured to extract a part of a high frequency wave matched by the matcher, and
the frequency detecting unit detects the initial frequency of the fundamental wave and the current frequency of the fundamental wave using the high frequency wave extracted from the waveguide.

11. The plasma processing apparatus of claim 1 , wherein the determining mechanism includes a third determining section configured to determine the state of the high frequency oscillator based on an efficiency of the high frequency oscillator.

12. The plasma processing apparatus of claim 11 , wherein the third determining section includes an efficiency detecting unit configured to detect an initial efficiency of the high frequency oscillator and a current efficiency of the high frequency oscillator, and an efficiency comparing unit configured to the initial efficiency of the high frequency oscillator and the current efficiency of the high frequency oscillator which are detected by the efficiency detecting unit.

13. The plasma processing apparatus of claim 12 , wherein the high frequency generator includes

Assignees

• Tokyo Electron Ltd

Inventors

• Kaneko Kazushi
• Funazaki Kazunori
• Kato Hideo

Classifications

• H05H2242/26

  Matching networks · CPC title

• H03L1/00

  Stabilisation of generator output against variations of physical values, e.g. power supply · CPC title

• H03L5/02

  of power · CPC title

• H03B9/10

  using a magnetron · CPC title

• H01J37/32192

  Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence) · CPC title