Forming an oxide volume within a fin

Patent metadata

Field	Value
Publication number	US-12224202-B2
Application number	US-202318356780-A
Country	US
Kind code	B2
Filing date	Jul 21, 2023
Priority date	Jun 27, 2019
Publication date	Feb 11, 2025
Grant date	Feb 11, 2025

Abstract

Embodiments of the present disclosure may generally relate to systems, apparatus, and/or processes to form volumes of oxide within a fin, such as a Si fin. In embodiments, this may be accomplished by applying a catalytic oxidant material on a side of a fin and then annealing to form a volume of oxide. In embodiments, this may be accomplished by using a plasma implant technique or a beam-line implant technique to introduce oxygen ions into an area of the fin and then annealing to form a volume of oxide. Processes described here may be used manufacture a transistor, a stacked transistor, or a three-dimensional (3-D) monolithic stacked transistor.

First claim

What is claimed is:

1. An apparatus comprising:
a fin with a first side and a second side opposite the first side, wherein the first side and the second side are substantially parallel to a plane of the fin;
a volume of oxide that extends through the fin from a first area on the first side of the fin to a second area on the second side of the fin, wherein the volume of oxide has at least one of a top surface or a bottom surface that is a non-planar surface between the first side and the second side of the fin, and wherein the volume of oxide has a vertical thickness at a center of the fin less than a vertical thickness at the first side of the fin and at the second side of the fin; and
wherein the volume of oxide includes a selected one or more of: carbon atoms or fluorine atoms.

2. The apparatus of claim 1 , wherein the first area on the first side of the fin and the second area on the second side of the fin substantially overlap in a Z-direction perpendicular to the plane of the fin.

3. The apparatus of claim 1 , wherein the fin is coupled with and perpendicular to a substrate.

4. The apparatus of claim 1 , wherein a material of the fin is a selected one of silicon (Si), germanium (Ge) or silicon-germanium (SiGe).

5. The apparatus of claim 1 , further including a first volume of the fin coupled with a first side of the volume of oxide, and a second volume of the fin coupled with a second side of the volume of oxide opposite the first side.

6. The apparatus of claim 5 , wherein the first volume of the fin or the second volume of the fin does not include carbon atoms or fluorine atoms.

7. The apparatus of claim 1 , wherein a surface of the volume of oxide includes a catalytic oxide.

8. A device comprising:
a substrate;
a transistor coupled with the substrate, the transistor comprising:
a fin coupled with the substrate, wherein the fin includes:
a first side and a second side opposite the first side that are substantially parallel to a plane of the fin;
a volume of oxide that extends through the fin from a first area on the first side of the fin to a second area on the second side of the fin, wherein the volume of oxide has at least one of a top surface or a bottom surface that is a non-planar surface between the first side and the second side of the fin, and wherein the volume of oxide has a vertical thickness at a center of the fin less than a vertical thickness at the first side of the fin and at the second side of the fin; and
wherein the volume of oxide includes a selected one or more of: carbon atoms or fluorine atoms.

9. The device of claim 8 , wherein the fin is substantially perpendicular to a plane of the substrate.

10. The device of claim 8 , wherein a material of the fin includes a selected one or more of: Si, Ge, or SiGe.

11. The device of claim 8 , wherein the first area on the first side of the fin and the second area on the second side of the fin substantially overlap in a Z-direction perpendicular to the plane of the fin.

12. The device of claim 8 , wherein a first volume of material of the fin is coupled with a first side of the volume of oxide and a second volume of material of the fin is coupled with a second side of the volume of oxide opposite the first side of the volume of oxide.

13. The device of claim 12 , wherein the first volume of material is a N or Player, the volume of oxide is a separation layer, and the second volume of material is a N or P layer.

Assignees

• Intel Corp

Inventors

• Huang Cheng-Ying
• Dewey Gilbert
• Kavalieros Jack T
• Lilak Aaron
• Mannebach Ehren
• Morrow Patrick
• Phan Anh
• Rachmady Willy
• Yoo Hui Jae

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P32/1406

  by ion implantation · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P32/141

  the applied layer comprising oxides only · CPC title

• H10P30/209

  in silicon to make buried insulating layers · CPC title