MgAl2O4 SINTERED BODY, SPUTTERING TARGET USING THE SINTERED BODY AND METHOD OF PRODUCING MgAl2O4 SINTERED BODY
US-2021017085-A1 · Jan 21, 2021 · US
Magnesium oxide sputtering target
US12224166B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12224166-B2 |
| Application number | US-201917284003-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 9, 2019 |
| Priority date | Oct 10, 2018 |
| Publication date | Feb 11, 2025 |
| Grant date | Feb 11, 2025 |
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- Title
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Abstract
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A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.
First claim
Opening claim text (preview).
The invention claimed is: 1. A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which 20 or more pinholes are observed under a microscope is 20% or more and 50% or less; wherein the ratio of crystal grains of the magnesium oxide sintered body in which 20 or more pinholes are observed is calculated based on the following formula: (ratio of crystal grains in which 20 or more pinholes are observed)={(number of crystal grains in which 20 or more pinholes are observed in a visual field under the microscope)/(total number of crystal grains in the visual field)}×100; wherein the pinholes have a diameter of about 1 μm and exist within the crystal grains; and wherein an average crystal grain size of the sputtering target is 35 μm or more to 400 μm or less. 2. The sputtering target according to claim 1 , wherein a flexural strength of the sputtering target is 150 MPa or more. 3. The sputtering target according to claim 1 , wherein a relative density of the sputtering target is 99.7% or higher.
Assignees
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Classifications
Cathode assembly for sputtering apparatus, e.g. Target · CPC title
- C23C14/081Primary
of aluminium, magnesium or beryllium · CPC title
Compositional purity · CPC title
Micrometer sized, i.e. from 1-100 micrometer · CPC title
obtained by SEM · CPC title
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- What does patent US12224166B2 cover?
- A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.
- Who is the assignee on this patent?
- Jx Nippon Mining & Metals Corp, Jx Advanced Metals Corp
- What technology area does this patent fall under?
- Primary CPC classification C23C14/081. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 11 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).