MgO SINTERED SPUTTERING TARGET

US2020263291A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020263291-A1
Application numberUS-201916648842-A
CountryUS
Kind codeA1
Filing dateMar 6, 2019
Priority dateSep 13, 2018
Publication dateAug 20, 2020
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.

First claim

Opening claim text (preview).

1 . A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. 2 . The MgO sintered sputtering target according to claim 1 , wherein the ratio of GOS (Grain Orientation Spread) being 0° to 1° is 90% or higher. 3 . A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 85% or higher. 4 . The MgO sintered sputtering target according to claim 3 , wherein the ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 95% or higher. 5 . The MgO sintered sputtering target according to claim 4 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 6 . The MgO sintered sputtering target according to claim 5 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 7 . The MgO sintered sputtering target according to claim 4 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 8 . The MgO sintered sputtering target according to claim 3 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 9 . The MgO sintered sputtering target according to claim 8 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 10 . The MgO sintered sputtering target according to claim 3 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 11 . The MgO sintered sputtering target according to claim 2 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 12 . The MgO sintered sputtering target according to claim 11 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 13 . The MgO sintered sputtering target according to claim 2 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 14 . The MgO sintered sputtering target according to claim 1 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 m or more. 15 . The MgO sintered sputtering target according to claim 14 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 16 . The MgO sintered sputtering target according to claim 1 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher.

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What does patent US2020263291A1 cover?
A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.
Who is the assignee on this patent?
Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/3426. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Aug 20 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).