Cu-ga-in-na target
US-2015354055-A1 · Dec 10, 2015 · US
US2020263291A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020263291-A1 |
| Application number | US-201916648842-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 6, 2019 |
| Priority date | Sep 13, 2018 |
| Publication date | Aug 20, 2020 |
| Grant date | — |
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A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.
Opening claim text (preview).
1 . A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. 2 . The MgO sintered sputtering target according to claim 1 , wherein the ratio of GOS (Grain Orientation Spread) being 0° to 1° is 90% or higher. 3 . A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 85% or higher. 4 . The MgO sintered sputtering target according to claim 3 , wherein the ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 95% or higher. 5 . The MgO sintered sputtering target according to claim 4 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 6 . The MgO sintered sputtering target according to claim 5 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 7 . The MgO sintered sputtering target according to claim 4 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 8 . The MgO sintered sputtering target according to claim 3 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 9 . The MgO sintered sputtering target according to claim 8 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 10 . The MgO sintered sputtering target according to claim 3 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 11 . The MgO sintered sputtering target according to claim 2 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 12 . The MgO sintered sputtering target according to claim 11 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 13 . The MgO sintered sputtering target according to claim 2 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 14 . The MgO sintered sputtering target according to claim 1 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 m or more. 15 . The MgO sintered sputtering target according to claim 14 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 16 . The MgO sintered sputtering target according to claim 1 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher.
Material · CPC title
based on magnesium oxide · CPC title
Density · CPC title
Micrometer sized grains, i.e. from 1 to 100 micron · CPC title
of aluminium, magnesium or beryllium · CPC title
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