Sintered compact magnesium oxide target for sputtering, and method for producing same

US10066290B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-10066290-B1
Application numberUS-201815969958-A
CountryUS
Kind codeB1
Filing dateMay 3, 2018
Priority dateDec 27, 2011
Publication dateSep 4, 2018
Grant dateSep 4, 2018

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A sintered compact magnesium oxide target for sputtering has a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm 3 or higher, and a whiteness of 60% or less. To uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is demanded. An object is to provide a target capable of realizing the above and a method for producing such a target. While a magnesium oxide sintered compact sputtering target is produced by hot-pressing a raw material powder, there is a problem in that color shading occurs in roughly φ60 (within a circle having a diameter of 60 mm) at the center part of the target. Conventionally, no particularly attention was given to this problem. However, in recent years, it has become necessary to investigate and resolve this problem in order to improve the deposition quality.

First claim

Opening claim text (preview).

We claim: 1. A method for producing a sputtering target comprising a sintered compact of magnesium oxide, comprising the steps of: adding raw material powder of MgCO 3 in an amount of 5 wt % or more and less than 30 wt % to raw material powder of magnesium oxide (MgO), the raw material powders of magnesium oxide (MgO) and MgCO 3 having a purity of 99.99 wt % or higher excluding C and an average grain size of 0.5 μm or less; mixing the raw material powder of MgCO 3 with the raw material powder of magnesium oxide (MgO) to produce a mixture; and hot pressing the mixture at a temperature of 1500° C. or less and an applied pressure of 300 kgf/cm 2 or more to obtain a sintered compact of magnesium oxide having a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm 3 or higher, and a whiteness of 60% or less.

Assignees

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Classifications

  • Materials characterised by the absence of phases other than the main phase, i.e. single phase materials · CPC title

  • C04B35/053Primary

    Fine ceramics · CPC title

  • Optical properties · CPC title

  • Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

  • Carbonates · CPC title

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What does patent US10066290B1 cover?
A sintered compact magnesium oxide target for sputtering has a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm 3 or higher, and a whiteness of 60% or less. To uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is demanded. An object is to provide a target capable of realizing the above and a method for producing suc…
Who is the assignee on this patent?
Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification C04B35/053. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Sep 04 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).