Materials and components in phase change memory devices

Patent metadata

Field	Value
Publication number	US-10008667-B2
Application number	US-201414473371-A
Country	US
Kind code	B2
Filing date	Aug 29, 2014
Priority date	Aug 29, 2014
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith which includes carbon and tungsten doped with nitrogen are disclosed and described. Such electrodes have a low contact resistance with the phase change material and a high thermal stability from room temperature to temperatures needed for programming operations.

First claim

What is claimed is:

1. A phase change memory structure, comprising:
a phase change material of a memory cell; and
an electrode forming an Ohmic contact with the phase change material, the electrode comprising a carbon tungsten nitrogen material (CWN) formed by co-sputtering carbon and tungsten under nitrogen flowing at a rate from about 2 sccm to about 10 sccm, wherein the electrode has a tungsten to carbon at % ratio of from about 20:80 to about 4:96.

2. The memory structure of claim 1 , wherein the electrode forms a diffusion barrier against contamination of the phase change material.

3. The memory structure of claim 1 , wherein the electrode has a tungsten to carbon at % ratio of from about 20:80 to about 5:95.

4. The memory structure of claim 1 , wherein the electrode has a tungsten to carbon at % ratio of from about 20:80 to about 10:90.

5. The memory structure of claim 1 , wherein the electrode is nitrogen doped to have a resistivity of from about 0.1 mOhm*cm to about 5 Ohm*cm.

6. The memory structure of claim 1 , wherein the electrode is nitrogen doped to have a resistivity of from about 0.5 mOhm*cm to about 25 mOhm*cm.

7. The memory structure of claim 1 , wherein the electrode has a tungsten to carbon at % ratio of about 4:96 and is further nitrogen doped to have a resistivity of from about 4.0 mOhm*cm to about 30.0 mOhm*cm.

8. A performance-enhanced phase change memory cell, comprising:
a stack structure including:
a first electrode;
a second electrode;
a phase change material disposed between the first electrode and the second electrode, wherein at least one of the first or second electrodes forms an Ohmic contact with the phase change material, the at least one of the first or second electrodes comprises a carbon tungsten nitride material (CWN) formed by co-sputtering carbon and tungsten under nitrogen flowing at a rate from about 2 sccm to about 10 sccm, and the at least one of the first or second electrodes has a tungsten to carbon at % ratio of from about 20:80 to about 4:96;
a third electrode; and
a select device material disposed between the third electrode and the second electrode.

9. The memory cell of claim 8 , wherein both the first and second electrodes form Ohmic contacts with the phase change material, the first and second electrodes comprising tungsten and carbon and being doped with nitrogen.

10. The memory cell of claim 8 , wherein the second and third electrodes form Ohmic contacts with the phase change material, the third electrode comprises tungsten and carbon and is doped with nitrogen.

11. The memory cell of claim 8 , wherein at least one of the first or second electrodes is nitrogen doped to an extent providing a resistivity of from about 0.1 mOhm*cm to about 5 Ohm*cm.

12. The memory cell of claim 8 , wherein at least one of the first or second electrodes is nitrogen doped to have a resistivity of from about 0.5 mOhm*cm to about 25mOhm*cm.

13. The memory cell of claim 8 , wherein at least one of the first or second electrodes has a tungsten to carbon at % ratio of about 4:96 and is further nitrogen doped to have a resistivity of from about 4.0 mOhm*cm to about 15.0 mOhm*cm.

14. The memory cell of claim 8 , wherein the select device material is a phase change material.

15. The memory structure of claim 1 , wherein the electrode has a tungsten to carbon at % ratio of 4:96 and the nitrogen is flowed at a rate of 8 sccm.

Assignees

• Intel Corp

Inventors

• Fumagalli Luca
• Lazzari Carla M
• Soncini Valter

Classifications

• H01L45/16

  Electricity · mapped topic

• H01L45/128

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L27/2427

  Electricity · mapped topic

• H01L45/144

  Electricity · mapped topic