3D nanochannel interleaved devices

Patent metadata

Field	Value
Publication number	US-12208386-B2
Application number	US-202318234004-A
Country	US
Kind code	B2
Filing date	Aug 15, 2023
Priority date	Dec 5, 2019
Publication date	Jan 28, 2025
Grant date	Jan 28, 2025

Abstract

3D nanochannel interleaved devices for molecular manipulation are provided. In one aspect, a method of forming a device includes: forming a pattern on a substrate of alternating mandrels and spacers alongside the mandrels; selectively removing the mandrels from a front portion of the pattern forming gaps between the spacers; selectively removing the spacers from a back portion of the pattern forming gaps between the mandrels; filling i) the gaps between the spacers with a conductor to form first electrodes and ii) the gaps between the mandrels with the conductor to form second electrodes; and etching the mandrels and the spacers in a central portion of the pattern to form a channel (e.g., a nanochannel) between the first electrodes and the second electrodes, wherein the first electrodes and the second electrodes are offset from one another across the channel, i.e., interleaved. A device formed by the method is also provided.

First claim

What is claimed is:

1. A method comprising:
forming a pattern of mandrels and spacers on a substrate, wherein the mandrels and the spacers are arranged in an alternating fashion, and wherein the pattern comprises a first portion, a second portion, and a third portion;
forming first gaps between the spacers located in the first portion of the pattern by selectively removing the mandrels located in the first portion of the pattern;
forming second gaps between the mandrels located in the third portion by selectively removing the spacers located in the third portion of the pattern;
forming first electrodes in the first gaps between the spacers located in the first portion of the pattern;
forming second electrodes in the second gaps between the mandrels located in the third portion; and
selectively removing the second portion of the pattern thereby forming a channel between the first portion of the pattern and the third portion of the pattern, wherein the first electrodes and the second electrodes are offset from one another across the channel.

2. The method of claim 1 , wherein forming the pattern on the substrate comprises:
forming first mandrels on the substrate;
forming the spacers on the substrate along sidewalls of the first mandrels; and
forming second mandrels on the substrate, the second mandrels located between the spacers.

3. The method of claim 1 , wherein forming the first gaps between the spacers located in the first portion of the pattern comprises:
forming a mask covering both the second portion and the third portion; and
selectively removing the mandrels from the first portion.

4. The method of claim 3 , wherein forming the second gaps between the mandrels located in the third portion comprises:
filling the first gaps between the spacers in the first portion with a sacrificial material prior to selectively removing the spacers from the third portion of the pattern.

5. The method of claim 1 , wherein forming the first electrodes in the first gaps and forming the second electrodes in the second gaps further comprises:
forming a channel spacer over the second portion of the pattern; and
depositing a conductor on the pattern to fill the first gaps and the second gaps.

6. The method of claim 5 , further comprising:
selectively removing the channel spacer to form a trench in the conductor, the trench being located over the second portion of the pattern.

7. The method of claim 6 , further comprising:
recessing the conductor to expose top surfaces of the spacers in the first portion and to expose top surfaces of the mandrels in the third portion.

8. The method of claim 1 , wherein the mandrels comprise an undoped silicon oxide (SiOx), and wherein the spacers comprise a nitride material.

9. A method comprising:
forming a pattern of mandrels and spacers on a substrate, wherein the mandrels and the spacers are arranged in an alternating fashion, and wherein the pattern comprises a first portion, a second portion, and a third portion;
forming first gaps between the spacers located in the first portion of the pattern;
forming second gaps between the mandrels located in the third portion of the pattern;
forming first electrodes in the first gaps;
forming second electrodes in the second gaps; and
selectively removing the second portion of the pattern thereby forming a channel, wherein the first electrodes and the second electrodes are offset from one another across the channel.

10. The method of claim 8 , wherein forming the pattern on the substrate comprises:
forming first mandrels on the substrate;
forming the spacers on the substrate along sidewalls of the first mandrels; and
forming second mandrels on the substrate, the second mandrels located between the spacers.

11. The method of claim 9 , wherein forming the first gaps between the spacers located in the first portion of the pattern comprises:
forming a mask covering both the second portion and the third portion; and
selectively removing the mandrels from the first portion.

12. The method of claim 11 , wherein forming the second gaps between the mandrels located in the third portion comprises:
filling the first gaps between the spacers in the first portion with a sacrificial material prior to selectively removing the spacers from the third portion of the pattern.

13. The method of claim 9 , wherein forming the first electrodes in the first gaps and forming the second electrodes in the second gaps further comprises:
forming a channel spacer over the second portion of the pattern; and
depositing a conductor on the pattern to fill the first gaps and the second gaps.

14. The method of claim 13 , further comprising:
selectively removing the channel spacer to form a trench in the conductor, the trench being located over the second portion of the pattern.

15. The method of claim 14 , further comprising:
recessing the conductor to expose top surfaces of the spacers in the first portion and to expose top surfaces of the mandrels in the third portion.

16. The method of claim 9 , wherein the mandrels comprise an undoped silicon oxide (SiOx), and wherein the spacers comprise a nitride material.

17. A method comprising:
forming a first series of electrodes in a first region, wherein the electrodes in the first series of electrodes are separated from one another by a series of spacers;
forming a second series of electrodes in a second region, wherein the electrodes in the second series of electrodes are separated from one another by a series of mandrels; and
forming a channel between the first series of electrodes in the first region and the second series of electrodes in the second region, wherein the electrodes in the first series of electrodes are offset across the channel from the electrodes in the second series of electrodes.

18. The method of claim 17 , wherein forming the first series of electrodes comprises:
forming a series of mandrels on a substrate in the first region, wherein mandrels in the series of mandrels are separated from one another by the series of spacers;
removing the series of mandrels selective to the series of spacers; and
forming the first series of electrodes in spaces created by removing the series of mandrels selective to the series of spacers.

19. The method of claim 17 , wherein forming the second series of electrodes comprises:
forming a series of spacers on a substrate in the second region, wherein the spacers in the series of spacers are separated from one another by the series of mandrels;
removing the series of spacers selective to the series of mandrels; and
forming the second series of electrodes in spaces created by removing the series of spacers selective to the series of mandrels.

20. The method of claim 17 , wherein the series of mandrels are made from an undoped silicon oxide (SiOx), and wherein the series of spacers are made from a nitride material.

Assignees

• IBM

Inventors

• Clevenger Lawrence A
• Cheng Kangguo
• Canaperi Donald
• Fetterolf Shawn Peter

Classifications

• B01L3/502715

  characterised by interfacing components, e.g. fluidic, electrical, optical or mechanical interfaces · CPC title

• B01L2300/0645

  Electrodes · CPC title

• B01L2300/0896

  Nanoscaled · CPC title

• B01L2200/12

  Specific details about manufacturing devices · CPC title

• B01L2300/12

  Specific details about materials · CPC title