Nanostructures for optical devices

Patent metadata

Field	Value
Publication number	US-12181736-B2
Application number	US-202217977376-A
Country	US
Kind code	B2
Filing date	Oct 31, 2022
Priority date	Nov 27, 2018
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

Embodiments of metasurfaces having nanostructures with desired geometric profiles and configurations are provided in the present disclosure. In one embodiment, a metasurface includes a nanostructure formed on a substrate, wherein the nanostructure is cuboidal or cylindrical in shape. In another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein each of the nanostructures has a gap greater than 35 nm spaced apart from each other. In yet another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein the nanostructures are fabricated from at least one of TiO 2 , silicon nitride, or amorphous silicon, or GaN or aluminum zinc oxide or any material with refractive index greater than 1.8, and absorption coefficient smaller than 0.001, the substrate is transparent with absorption coefficient smaller than 0.001.

First claim

The invention claimed is:

1. A device, comprising:
an array of nanostructures formed on a substrate, wherein each nanostructure of the array of nanostructures is spaced away from each other with a gap therebetween, wherein the gap is greater than 10 nm, wherein a first length of the gap defined in a first group of nanostructures is greater than a second length of the gap defined in a second group of nanostructures, wherein a first height of the first group of nanostructures corresponds to the first length of the gap and the first height of the first group of nanostructures is greater than a second height of the second group of nanostructures.

2. The device of claim 1 , wherein the device is a metasurface.

3. The device of claim 2 , wherein the gap is between about 55 nm to about 100 nm.

4. The device of claim 3 , wherein the nanostructures in the array of nanostructures comprises a dielectric material and have a height greater than 600 nm.

5. The device of claim 4 , wherein the dielectric material is at least one of titanium dioxide, silicon nitride, amorphous silicon, crystalline silicon, gallium nitride, and aluminum zinc oxide.

6. The device of claim 2 , wherein the nanostructures in the array of nanostructures have different lateral dimensions.

7. The device of claim 2 , wherein the nanostructures in the array of nanostructures have a uniform lateral dimension.

8. The device of claim 2 , wherein the gap is greater than 35 nm.

9. The device of claim 1 , further comprising:
an encapsulating layer encapsulating the array of nanostructures.

10. The device of claim 9 , wherein the array of nanostructures has a relative height greater than 900 nm.

11. The device of claim 1 , wherein the nanostructures of the array of nanostructures have a refractive index greater than 1.8 and an absorption coefficient smaller than 0.001.

12. The device of claim 1 , wherein the array of the nanostructures provide all possible values of transmission phase between 0 and 2π.

13. The device of claim 1 , wherein the array of the nanostructures provide a value of transmission amplitude close to 1.

14. A device, comprising:
an array of nanostructures formed on a substrate, wherein each nanostructure of the array of nanostructures is spaced away from each other with a gap therebetween, wherein the gap is greater than 10 nm, wherein a first length of the gap defined in a first group of nanostructures is greater than a second length of the gap defined in a second group of nanostructures, wherein the first group of the nanostructures has a higher refractive index than the second group of nanostructures.

15. A device, comprising:
a plurality of nanostructures on a substrate, wherein each of the nanostructures is spaced from other nanostructures by a gap greater than 10 nm, wherein the gap defined in a first group of nanostructures of the plurality of nanostructures is greater than the gap defined in a second group of nanostructures of the plurality of nanostructures, the first group of nanostructures having a higher refractive index than the second group of nanostructures.

16. The device of claim 15 , wherein the plurality of nanostructures are cuboidal or cylindrical in shape.

17. The device of claim 15 , wherein the plurality of nanostructures have refractive index greater than 1.8.

18. The device of claim 15 , wherein the plurality of nanostructures are fabricated from at least one of titanium dioxide, silicon nitride, amorphous silicon, crystalline silicon, gallium nitride and aluminum zinc oxide.

19. A device, comprising:
a plurality of nanostructures on a substrate, wherein the plurality of nanostructures are fabricated from at least one of TiO 2 , silicon nitride, amorphous silicon, GaN, aluminum zinc oxide or any material with refractive index greater than 1.8, and an absorption coefficient smaller than 0.001, the substrate is transparent with absorption coefficient smaller than 0.001, and wherein a gap defined in a first group of nanostructures of the plurality of nanostructures is greater than the gap defined in a second group of nanostructures of the plurality of nanostructures, the first group of nanostructures having a higher refractive index than the second group of nanostructures.

Assignees

• Applied Materials Inc

Inventors

• Roy Tapashree
• Mcmillan Wayne
• Meyer Timmerman Thijssen Rutger

Classifications

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• G02B2207/101

  Nanooptics · CPC title

• G02B1/002

  made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title

• G02F2202/30

  Metamaterials · CPC title

• G02F1/0102 Primary

  Constructional details, not otherwise provided for in this subclass · CPC title